High-performance 1.06 μm vertical-cavity surface-emitting lasers with InGaAs/GaAsP strain-compensated quantum wells

H. Q. Hou, K. D. Choquette, B. E. Hammons, K. M. Geib

Research output: Contribution to journalConference articlepeer-review

Abstract

The first room temperature continuous wave (cw) operation of high performance 1.06 μm monolithic vertical cavity surface-emitting lasers (VCSEL) is presented. The VCSELs use strained balance InGaAs/GaAsP quantum wells in the active region. The devices operates at a very low threshold current (310 μA) and threshold voltage (1.26 V).

Original languageEnglish (US)
Pages (from-to)288-289
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume11
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA
Duration: May 18 1997May 23 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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