High-performance 1.06-μm selectively oxidized vertical-cavity surface-emitting lasers with InGaAs-GaAsP strain-compensated quantum wells

H. Q. Hou, K. D. Choquette, K. M. Geib, B. E. Hammons

Research output: Contribution to journalArticle

Abstract

We present the first room-temperature continuous-wave operation of high-performance 1.06-μm selectively oxidized vertical-cavity surface-emitting lasers (VCSEL's). The lasers contain strain-compensated InGaAs-GaAsP quantum wells (QWs) in the active region grown by metalorganic vapor phase epitaxy. The threshold current is 190 μA for a 2.5 × 2.5 μm 2 device, and the threshold voltage is as low as 1.255 V for a 6 × 6 μm device. Lasing at a wavelength as long as 1.1 μm was also achieved. We discuss the wavelength limit for lasers using the strain-compensated QW's on GaAs substrates.

Original languageEnglish (US)
Pages (from-to)1057-1059
Number of pages3
JournalIEEE Photonics Technology Letters
Volume9
Issue number8
DOIs
StatePublished - Aug 1 1997
Externally publishedYes

Keywords

  • 1.06-μm wavelength
  • Metalorganic vapor phase epitaxy
  • Selective oxidation
  • Strain-compensated quantum wells
  • Vertical-cavity surface-emitting lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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