High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm

V. Kumar; W. Lu; F. A. Khan; R. Schwindt; A. Kuliev; G. Simin; J. Yang; M. Asif Khan; I. Adesida

doi:10.1049/el:20020178

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm

V. Kumar, W. Lu, F. A. Khan, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) having record high transconductance of over 400 mS/mm have been fabricated on sapphire substrates. These 0.25 μm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm, unity gain cutoff frequency (f_T) of 85 GHz. and maximum frequency of oscillation (f_max) of 151 GHz. The f_T of 85 GHz and f_max of 151 GHz are the highest ever reported values for 0.25 μm gate-length GaN-based HEMTs.

Original language	English (US)
Pages (from-to)	252-253
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	5
DOIs	https://doi.org/10.1049/el:20020178
State	Published - Feb 28 2002
Externally published	Yes

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Electrical and Electronic Engineering

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10.1049/el:20020178

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title = "High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm",

abstract = "Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) having record high transconductance of over 400 mS/mm have been fabricated on sapphire substrates. These 0.25 μm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm, unity gain cutoff frequency (fT) of 85 GHz. and maximum frequency of oscillation (fmax) of 151 GHz. The fT of 85 GHz and fmax of 151 GHz are the highest ever reported values for 0.25 μm gate-length GaN-based HEMTs.",

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year = "2002",

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doi = "10.1049/el:20020178",

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T1 - High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm

AU - Kumar, V.

AU - Lu, W.

AU - Khan, F. A.

AU - Schwindt, R.

AU - Kuliev, A.

AU - Simin, G.

AU - Yang, J.

AU - Asif Khan, M.

AU - Adesida, I.

PY - 2002/2/28

Y1 - 2002/2/28

N2 - Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) having record high transconductance of over 400 mS/mm have been fabricated on sapphire substrates. These 0.25 μm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm, unity gain cutoff frequency (fT) of 85 GHz. and maximum frequency of oscillation (fmax) of 151 GHz. The fT of 85 GHz and fmax of 151 GHz are the highest ever reported values for 0.25 μm gate-length GaN-based HEMTs.

AB - Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) having record high transconductance of over 400 mS/mm have been fabricated on sapphire substrates. These 0.25 μm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm, unity gain cutoff frequency (fT) of 85 GHz. and maximum frequency of oscillation (fmax) of 151 GHz. The fT of 85 GHz and fmax of 151 GHz are the highest ever reported values for 0.25 μm gate-length GaN-based HEMTs.

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High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm

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