High performance 0.15 μm self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric

W. Lu; R. Hammond; S. J. Koester; X. W. Wang; J. O. Chu; T. P. Ma; I. Adesida

High performance 0.15 μm self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric

W. Lu, R. Hammond, S. J. Koester, X. W. Wang, J. O. Chu, T. P. Ma, I. Adesida

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Using jet-vapor-deposited silicon nitride as gate dielectric, self-aligned p-type SiGe metal-oxide-semiconductor modulated-doped field effect transistors are fabricated. For a 0.15 μm gate-length device, the gate leakage current is as low as 0.46 nA/μm at V_gs = 3 V and V_ds = -50 mV. A maximum extrinsic transconductance of 305 mS/mm, a unity current gain cut-off frequency of 62 GHz, and a maximum oscillation frequency of 68 GHz are measured at low operating biases of V_ds = -0.75 V and V_gs = 0.4 V.

Original language	English (US)
Pages (from-to)	577-580
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1999
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: Dec 5 1999 → Dec 8 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "High performance 0.15 μm self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric",

abstract = "Using jet-vapor-deposited silicon nitride as gate dielectric, self-aligned p-type SiGe metal-oxide-semiconductor modulated-doped field effect transistors are fabricated. For a 0.15 μm gate-length device, the gate leakage current is as low as 0.46 nA/μm at Vgs = 3 V and Vds = -50 mV. A maximum extrinsic transconductance of 305 mS/mm, a unity current gain cut-off frequency of 62 GHz, and a maximum oscillation frequency of 68 GHz are measured at low operating biases of Vds = -0.75 V and Vgs = 0.4 V.",

author = "W. Lu and R. Hammond and Koester, {S. J.} and Wang, {X. W.} and Chu, {J. O.} and Ma, {T. P.} and I. Adesida",

year = "1999",

language = "English (US)",

pages = "577--580",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

}

TY - JOUR

T1 - High performance 0.15 μm self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric

AU - Lu, W.

AU - Hammond, R.

AU - Koester, S. J.

AU - Wang, X. W.

AU - Chu, J. O.

AU - Ma, T. P.

AU - Adesida, I.

PY - 1999

Y1 - 1999

N2 - Using jet-vapor-deposited silicon nitride as gate dielectric, self-aligned p-type SiGe metal-oxide-semiconductor modulated-doped field effect transistors are fabricated. For a 0.15 μm gate-length device, the gate leakage current is as low as 0.46 nA/μm at Vgs = 3 V and Vds = -50 mV. A maximum extrinsic transconductance of 305 mS/mm, a unity current gain cut-off frequency of 62 GHz, and a maximum oscillation frequency of 68 GHz are measured at low operating biases of Vds = -0.75 V and Vgs = 0.4 V.

AB - Using jet-vapor-deposited silicon nitride as gate dielectric, self-aligned p-type SiGe metal-oxide-semiconductor modulated-doped field effect transistors are fabricated. For a 0.15 μm gate-length device, the gate leakage current is as low as 0.46 nA/μm at Vgs = 3 V and Vds = -50 mV. A maximum extrinsic transconductance of 305 mS/mm, a unity current gain cut-off frequency of 62 GHz, and a maximum oscillation frequency of 68 GHz are measured at low operating biases of Vds = -0.75 V and Vgs = 0.4 V.

UR - http://www.scopus.com/inward/record.url?scp=0033324591&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033324591&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033324591

SN - 0163-1918

SP - 577

EP - 580

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

High performance 0.15 μm self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric

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