High performance 0.15 μm recessed gate AlGaN/GaN HEMTs on sapphire

V. Kumar, W. Lu, F. A. Khan, R. Schwindt, A. Kuliev, J. Yang, M. Asif Khan, I. Adesida

Research output: Contribution to journalConference article

Abstract

Using ICP-RIE, recessed 0.15 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated. These 0.15 μm gate-length devices exhibited maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (fT) of 107 GHz, and maximum frequency of oscillation (fmax) of 148 GHz. The fT of 107 GHz is the highest reported value for similar gate-length GaN-based HEMTs.

Original languageEnglish (US)
Pages (from-to)573-576
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 2001
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: Dec 2 2001Dec 5 2001

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kumar, V., Lu, W., Khan, F. A., Schwindt, R., Kuliev, A., Yang, J., Asif Khan, M., & Adesida, I. (2001). High performance 0.15 μm recessed gate AlGaN/GaN HEMTs on sapphire. Technical Digest - International Electron Devices Meeting, 573-576.