TY - GEN
T1 - High-performance 0.15 μm-gatelength OMVPE-grown InAlAs/InGaAs MODFETS
AU - Adesida, I.
AU - Nummila, K.
AU - Tong, M.
AU - Caneau, C.
AU - Bhat, R.
PY - 1993
Y1 - 1993
N2 - In this paper, the dc and microwave performance of modulation-doped field effect transistors (MODFETs) with 0.15 μm T-gates fabricate in OMVPE-grown lattice-matched InAlAs/InGaAs/InP heterostructure are reported. Devices with extrinsic transconductance, gm, as high as 1080 mS/mm at 508 mA/mm and a unity current-gain cutoff frequency, fT, of 187 GHz are shown. To date, this is the highest fT reported for OMVPE-grown MODFETs.
AB - In this paper, the dc and microwave performance of modulation-doped field effect transistors (MODFETs) with 0.15 μm T-gates fabricate in OMVPE-grown lattice-matched InAlAs/InGaAs/InP heterostructure are reported. Devices with extrinsic transconductance, gm, as high as 1080 mS/mm at 508 mA/mm and a unity current-gain cutoff frequency, fT, of 187 GHz are shown. To date, this is the highest fT reported for OMVPE-grown MODFETs.
UR - http://www.scopus.com/inward/record.url?scp=0027188783&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027188783&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0027188783
SN - 0780309944
T3 - 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials
SP - 405
EP - 408
BT - 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials
PB - Publ by IEEE
T2 - 1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4)
Y2 - 19 April 1993 through 22 April 1993
ER -