High mobility N-type transistors based on solution-sheared doped 6,13-bis(triisopropylsilylethynyl)pentacene thin films

Benjamin D. Naab; Scott Himmelberger; Ying Diao; Koen Vandewal; Peng Wei; Björn Lussem; Alberto Salleo; Zhenan Bao

doi:10.1002/adma.201205098

High mobility N-type transistors based on solution-sheared doped 6,13-bis(triisopropylsilylethynyl)pentacene thin films

Benjamin D. Naab, Scott Himmelberger, Ying Diao, Koen Vandewal, Peng Wei, Björn Lussem, Alberto Salleo, Zhenan Bao

Research output: Contribution to journal › Article › peer-review

Abstract

An N-Type organic thin-film transistor (OTFT) based on doped 6,13-Bis(triisopropylsilylethynyl)pentacene is presented. A transition from p-type to n-type occurrs with increasing doping concentrations, and the highest performing n-channel OTFTs are obtained with 50 mol% dopant. X-ray diffraction, scanning Auger microscopy, and secondary ionization mass spectrometry are used to characterize the morphology of the blends. The high performance of the obtained transistors is attributed to the highly crystalline and aligned nature of the doped thin films.

Original language	English (US)
Pages (from-to)	4663-4667
Number of pages	5
Journal	Advanced Materials
Volume	25
Issue number	33
DOIs	https://doi.org/10.1002/adma.201205098
State	Published - Sep 6 2013
Externally published	Yes

Keywords

blend aligned crystals
complementary inverters
electron traps
grain boundaries
organic electronics

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Online availability

10.1002/adma.201205098

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@article{bb9a871d5e7345afb2609a9d61fbc734,

title = "High mobility N-type transistors based on solution-sheared doped 6,13-bis(triisopropylsilylethynyl)pentacene thin films",

abstract = "An N-Type organic thin-film transistor (OTFT) based on doped 6,13-Bis(triisopropylsilylethynyl)pentacene is presented. A transition from p-type to n-type occurrs with increasing doping concentrations, and the highest performing n-channel OTFTs are obtained with 50 mol% dopant. X-ray diffraction, scanning Auger microscopy, and secondary ionization mass spectrometry are used to characterize the morphology of the blends. The high performance of the obtained transistors is attributed to the highly crystalline and aligned nature of the doped thin films.",

keywords = "blend aligned crystals, complementary inverters, electron traps, grain boundaries, organic electronics",

author = "Naab, {Benjamin D.} and Scott Himmelberger and Ying Diao and Koen Vandewal and Peng Wei and Bj{\"o}rn Lussem and Alberto Salleo and Zhenan Bao",

year = "2013",

month = sep,

day = "6",

doi = "10.1002/adma.201205098",

language = "English (US)",

volume = "25",

pages = "4663--4667",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "33",

}

TY - JOUR

T1 - High mobility N-type transistors based on solution-sheared doped 6,13-bis(triisopropylsilylethynyl)pentacene thin films

AU - Naab, Benjamin D.

AU - Himmelberger, Scott

AU - Diao, Ying

AU - Vandewal, Koen

AU - Wei, Peng

AU - Lussem, Björn

AU - Salleo, Alberto

AU - Bao, Zhenan

PY - 2013/9/6

Y1 - 2013/9/6

N2 - An N-Type organic thin-film transistor (OTFT) based on doped 6,13-Bis(triisopropylsilylethynyl)pentacene is presented. A transition from p-type to n-type occurrs with increasing doping concentrations, and the highest performing n-channel OTFTs are obtained with 50 mol% dopant. X-ray diffraction, scanning Auger microscopy, and secondary ionization mass spectrometry are used to characterize the morphology of the blends. The high performance of the obtained transistors is attributed to the highly crystalline and aligned nature of the doped thin films.

AB - An N-Type organic thin-film transistor (OTFT) based on doped 6,13-Bis(triisopropylsilylethynyl)pentacene is presented. A transition from p-type to n-type occurrs with increasing doping concentrations, and the highest performing n-channel OTFTs are obtained with 50 mol% dopant. X-ray diffraction, scanning Auger microscopy, and secondary ionization mass spectrometry are used to characterize the morphology of the blends. The high performance of the obtained transistors is attributed to the highly crystalline and aligned nature of the doped thin films.

KW - blend aligned crystals

KW - complementary inverters

KW - electron traps

KW - grain boundaries

KW - organic electronics

UR - http://www.scopus.com/inward/record.url?scp=84883487143&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84883487143&partnerID=8YFLogxK

U2 - 10.1002/adma.201205098

DO - 10.1002/adma.201205098

M3 - Article

C2 - 23813467

AN - SCOPUS:84883487143

SN - 0935-9648

VL - 25

SP - 4663

EP - 4667

JO - Advanced Materials

JF - Advanced Materials

IS - 33

ER -

High mobility N-type transistors based on solution-sheared doped 6,13-bis(triisopropylsilylethynyl)pentacene thin films

Abstract

Keywords

ASJC Scopus subject areas

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