High I_on/I_offratio 4H-SiC MISFETs with stable operation at 500 °C using SiO₂/SiN_x/Al₂O₃gate stacks

Keyphrases

• Silica 100%
• Stable Operation 100%
• Metal-insulator-semiconductor Field-effect Transistor (MISFET) 100%
• SiNx 100%
• 4H-SiC 100%
• Room Temperature 40%
• Ring Structure 40%
• Dielectric Stack 40%
• Triple-layer 20%
• Gate Dielectric 20%
• Extreme Temperature 20%
• Increased Temperature 20%
• On-state Current 20%
• Electron Mobility 20%
• High Thermal Stability 20%
• Subthreshold Swing 20%
• Interface Traps 20%
• Capacitance-voltage Measurements 20%
• Dielectric Interface 20%
• Current Ratio 20%
• Dielectric Structure 20%
• Off-state Current 20%
• Al2O3 Gate Dielectric 20%

Material Science

• Field Effect Transistor 100%
• Dielectric Material 80%
• Density 20%
• Al2O3 20%
• Thermal Stability 20%
• Capacitance 20%
• Electron Mobility 20%