Time-dependent dielectric breakdown (TDDB) of thin oxides (8.6-11 nm) is compared under dc, pulse, and bipolar pulse conditions for frequencies up to 4 MHz. Lifetime under unipolar pulse conditions does not deviate largely from that under dc conditions; however, lifetime under bipolar stress conditions increases by a factor of 40 to 100 at frequencies above 10 kHz. The field acceleration of breakdown time is similar for dc and pulse stressing.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering