High-Frequency Time-Dependent Breakdown of SiO2

Elyse Rosenbaum, Chenming Hu

Research output: Contribution to journalArticle

Abstract

Time-dependent dielectric breakdown (TDDB) of thin oxides (8.6-11 nm) is compared under dc, pulse, and bipolar pulse conditions for frequencies up to 4 MHz. Lifetime under unipolar pulse conditions does not deviate largely from that under dc conditions; however, lifetime under bipolar stress conditions increases by a factor of 40 to 100 at frequencies above 10 kHz. The field acceleration of breakdown time is similar for dc and pulse stressing.

Original languageEnglish (US)
Pages (from-to)267-269
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number6
DOIs
StatePublished - Jun 1991

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Electric breakdown
Oxides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

High-Frequency Time-Dependent Breakdown of SiO2. / Rosenbaum, Elyse; Hu, Chenming.

In: IEEE Electron Device Letters, Vol. 12, No. 6, 06.1991, p. 267-269.

Research output: Contribution to journalArticle

Rosenbaum, Elyse ; Hu, Chenming. / High-Frequency Time-Dependent Breakdown of SiO2. In: IEEE Electron Device Letters. 1991 ; Vol. 12, No. 6. pp. 267-269.
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