High-Frequency Time-Dependent Breakdown of SiO2

Elyse Rosenbaum; Chenming Hu

doi:10.1109/55.82056

High-Frequency Time-Dependent Breakdown of SiO₂

Research output: Contribution to journal › Article › peer-review

Abstract

Time-dependent dielectric breakdown (TDDB) of thin oxides (8.6-11 nm) is compared under dc, pulse, and bipolar pulse conditions for frequencies up to 4 MHz. Lifetime under unipolar pulse conditions does not deviate largely from that under dc conditions; however, lifetime under bipolar stress conditions increases by a factor of 40 to 100 at frequencies above 10 kHz. The field acceleration of breakdown time is similar for dc and pulse stressing.

Original language	English (US)
Pages (from-to)	267-269
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	6
DOIs	https://doi.org/10.1109/55.82056
State	Published - Jun 1991
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/55.82056

Library availability

Discover UIUC Full Text

Cite this

@article{780c9f22f0704faeac84be6da835826a,

title = "High-Frequency Time-Dependent Breakdown of SiO2",

abstract = "Time-dependent dielectric breakdown (TDDB) of thin oxides (8.6-11 nm) is compared under dc, pulse, and bipolar pulse conditions for frequencies up to 4 MHz. Lifetime under unipolar pulse conditions does not deviate largely from that under dc conditions; however, lifetime under bipolar stress conditions increases by a factor of 40 to 100 at frequencies above 10 kHz. The field acceleration of breakdown time is similar for dc and pulse stressing.",

author = "Elyse Rosenbaum and Chenming Hu",

note = "Funding Information: Manuscript received December 28, 1990; revised March 11, 1991. This work was supported by SRC, Sandia Laboratories, AMD, MICRO, and ISTO/SDIO through ONR under Contract “14-85-K-0603. The authors are with the Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720. IEEE Log Number 9100358.",

year = "1991",

month = jun,

doi = "10.1109/55.82056",

language = "English (US)",

volume = "12",

pages = "267--269",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - High-Frequency Time-Dependent Breakdown of SiO2

AU - Rosenbaum, Elyse

AU - Hu, Chenming

N1 - Funding Information: Manuscript received December 28, 1990; revised March 11, 1991. This work was supported by SRC, Sandia Laboratories, AMD, MICRO, and ISTO/SDIO through ONR under Contract “14-85-K-0603. The authors are with the Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720. IEEE Log Number 9100358.

PY - 1991/6

Y1 - 1991/6

N2 - Time-dependent dielectric breakdown (TDDB) of thin oxides (8.6-11 nm) is compared under dc, pulse, and bipolar pulse conditions for frequencies up to 4 MHz. Lifetime under unipolar pulse conditions does not deviate largely from that under dc conditions; however, lifetime under bipolar stress conditions increases by a factor of 40 to 100 at frequencies above 10 kHz. The field acceleration of breakdown time is similar for dc and pulse stressing.

AB - Time-dependent dielectric breakdown (TDDB) of thin oxides (8.6-11 nm) is compared under dc, pulse, and bipolar pulse conditions for frequencies up to 4 MHz. Lifetime under unipolar pulse conditions does not deviate largely from that under dc conditions; however, lifetime under bipolar stress conditions increases by a factor of 40 to 100 at frequencies above 10 kHz. The field acceleration of breakdown time is similar for dc and pulse stressing.

UR - http://www.scopus.com/inward/record.url?scp=0026169486&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026169486&partnerID=8YFLogxK

U2 - 10.1109/55.82056

DO - 10.1109/55.82056

M3 - Article

AN - SCOPUS:0026169486

SN - 0741-3106

VL - 12

SP - 267

EP - 269

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -