High frequency noise characterization and modeling of InGaP/GaAs SHBTs

Benjamin F. Chu-Kung, Kurt Cimino, Yu Ju Chuang, Mark Stuenkel, Milton Feng, A. Wibowo, G. Hillier, N. Pan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InGaP/GaAs SHBTs have been fabricated and the device RF and noise performance has been measured. A smallsignal model has been created from the S-parameters of the measured devices. Thermal and shot noise is added to create a first generation noise model, which shows good agreement with measured data. The devices (L=3x12 μm2) showed an FMIN = 1.68 dB at 6 GHz for VCE = 1.8 V and IC = 1.56 mA.

Original languageEnglish (US)
Title of host publication2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007
Pages77-80
Number of pages4
StatePublished - 2007
Event22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007 - Austin, TX, United States
Duration: May 14 2007May 17 2007

Publication series

Name2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

Other

Other22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007
Country/TerritoryUnited States
CityAustin, TX
Period5/14/075/17/07

Keywords

  • GaAs
  • HBT
  • Ingap
  • Noise
  • SHBT

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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