High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications

W. E. Hoke; R. E. Leoni; C. S. Whelan; P. F. Marsh; J. H. Jang; I. Adesida; A. M. Joshi; X. Wang

doi:10.1116/1.1470516

High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications

W. E. Hoke, R. E. Leoni, C. S. Whelan, P. F. Marsh, J. H. Jang, I. Adesida, A. M. Joshi, X. Wang

Research output: Contribution to journal › Conference article › peer-review

Abstract

Metamorphic films were grown on GaAs substrates by solid source molecular-beam epitaxy for optical p-i-n photodetectors and transimpedance amplifiers. The surface roughness was studied using atomic force microscopy. The surface morphologies of the completed device structures were found to be specular to the eye. They also exhibited the characteristic cross-hatch pattern of metamorphic growth under Nomarski microscope contrast.

Original language	English (US)
Pages (from-to)	1209-1212
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1470516
State	Published - May 2002
Externally published	Yes
Event	20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: Oct 1 2001 → Oct 3 2001

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1470516

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Hoke, W. E., Leoni, R. E., Whelan, C. S., Marsh, P. F., Jang, J. H., Adesida, I., Joshi, A. M., & Wang, X. (2002). High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(3), 1209-1212. https://doi.org/10.1116/1.1470516

High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications. / Hoke, W. E.; Leoni, R. E.; Whelan, C. S. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 3, 05.2002, p. 1209-1212.

Research output: Contribution to journal › Conference article › peer-review

Hoke, WE, Leoni, RE, Whelan, CS, Marsh, PF, Jang, JH, Adesida, I, Joshi, AM & Wang, X 2002, 'High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 3, pp. 1209-1212. https://doi.org/10.1116/1.1470516

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abstract = "Metamorphic films were grown on GaAs substrates by solid source molecular-beam epitaxy for optical p-i-n photodetectors and transimpedance amplifiers. The surface roughness was studied using atomic force microscopy. The surface morphologies of the completed device structures were found to be specular to the eye. They also exhibited the characteristic cross-hatch pattern of metamorphic growth under Nomarski microscope contrast.",

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AU - Leoni, R. E.

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AU - Adesida, I.

AU - Joshi, A. M.

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High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications

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