TY - GEN
T1 - High-field carrier velocity and current saturation in graphene field-effect transistors
AU - Scott, Brett W.
AU - Leburton, Jean Pierre
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - We obtain the output characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed expressions for the conductance, transconductance and saturation voltage are derived. We found good agreement with the experimental data of Meric et al. [1], without assuming a carrier density-dependent velocity saturation.
AB - We obtain the output characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed expressions for the conductance, transconductance and saturation voltage are derived. We found good agreement with the experimental data of Meric et al. [1], without assuming a carrier density-dependent velocity saturation.
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U2 - 10.1109/NANO.2010.5697808
DO - 10.1109/NANO.2010.5697808
M3 - Conference contribution
AN - SCOPUS:79951849169
SN - 9781424470334
T3 - 2010 10th IEEE Conference on Nanotechnology, NANO 2010
SP - 655
EP - 658
BT - 2010 10th IEEE Conference on Nanotechnology, NANO 2010
T2 - 2010 10th IEEE Conference on Nanotechnology, NANO 2010
Y2 - 17 August 2010 through 20 August 2010
ER -