High-field carrier velocity and current saturation in graphene field-effect transistors

Brett W. Scott, Jean Pierre Leburton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We obtain the output characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed expressions for the conductance, transconductance and saturation voltage are derived. We found good agreement with the experimental data of Meric et al. [1], without assuming a carrier density-dependent velocity saturation.

Original languageEnglish (US)
Title of host publication2010 10th IEEE Conference on Nanotechnology, NANO 2010
Pages655-658
Number of pages4
DOIs
StatePublished - 2010
Event2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of
Duration: Aug 17 2010Aug 20 2010

Publication series

Name2010 10th IEEE Conference on Nanotechnology, NANO 2010

Other

Other2010 10th IEEE Conference on Nanotechnology, NANO 2010
Country/TerritoryKorea, Republic of
CityIlsan, Gyeonggi-Do
Period8/17/108/20/10

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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