High energy diffusion equation for polar semiconductors

J. P. Leburton; K. Hess

doi:10.1016/0378-4363(83)90484-9

High energy diffusion equation for polar semiconductors

J. P. Leburton, K. Hess

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We present a novel method to explicity solve the Boltzman equation for highly energetic electrons interacting with polar optical phonons and scattering mainly in forward direction. Our approach reduces the collision integral of the Boltzmann equation into a differential operator which is much easier to manipulate than the integral form and does not require a relaxation time approximation. The spatial diffusion of highly energetic electrons is calculated and discussed in context with high speed velocity transients ("ballistic transport"). Explicit results compare favorably with sophisticated Monte Carlo simulations and are well suited to treat complex transport problems in submicron III-V devices. As an example we calculate the current voltage characteristic of a "camel-back diode".

Original language	English (US)
Pages (from-to)	211-213
Number of pages	3
Journal	Physica B+C
Volume	117-118
Issue number	PART 1
DOIs	https://doi.org/10.1016/0378-4363(83)90484-9
State	Published - Mar 1983

ASJC Scopus subject areas

General Engineering

Online availability

10.1016/0378-4363(83)90484-9

Library availability

Discover UIUC Full Text

Cite this

@article{3b59a029773d4680be55399fb35d8ee0,

title = "High energy diffusion equation for polar semiconductors",

abstract = "We present a novel method to explicity solve the Boltzman equation for highly energetic electrons interacting with polar optical phonons and scattering mainly in forward direction. Our approach reduces the collision integral of the Boltzmann equation into a differential operator which is much easier to manipulate than the integral form and does not require a relaxation time approximation. The spatial diffusion of highly energetic electrons is calculated and discussed in context with high speed velocity transients ({"}ballistic transport{"}). Explicit results compare favorably with sophisticated Monte Carlo simulations and are well suited to treat complex transport problems in submicron III-V devices. As an example we calculate the current voltage characteristic of a {"}camel-back diode{"}.",

author = "Leburton, {J. P.} and K. Hess",

note = "Funding Information: Financial support of the U.S. Army Research Office and the Electronics Technology and Devices Laboratory, Ft. Monmouth, is gratefully acknowledged. The work was also supported by the Joint Services Electronics Programs.",

year = "1983",

month = mar,

doi = "10.1016/0378-4363(83)90484-9",

language = "English (US)",

volume = "117-118",

pages = "211--213",

journal = "Physica B+C",

issn = "0378-4363",

publisher = "North-Holland Publ Co",

number = "PART 1",

}

TY - JOUR

T1 - High energy diffusion equation for polar semiconductors

AU - Leburton, J. P.

AU - Hess, K.

N1 - Funding Information: Financial support of the U.S. Army Research Office and the Electronics Technology and Devices Laboratory, Ft. Monmouth, is gratefully acknowledged. The work was also supported by the Joint Services Electronics Programs.

PY - 1983/3

Y1 - 1983/3

N2 - We present a novel method to explicity solve the Boltzman equation for highly energetic electrons interacting with polar optical phonons and scattering mainly in forward direction. Our approach reduces the collision integral of the Boltzmann equation into a differential operator which is much easier to manipulate than the integral form and does not require a relaxation time approximation. The spatial diffusion of highly energetic electrons is calculated and discussed in context with high speed velocity transients ("ballistic transport"). Explicit results compare favorably with sophisticated Monte Carlo simulations and are well suited to treat complex transport problems in submicron III-V devices. As an example we calculate the current voltage characteristic of a "camel-back diode".

AB - We present a novel method to explicity solve the Boltzman equation for highly energetic electrons interacting with polar optical phonons and scattering mainly in forward direction. Our approach reduces the collision integral of the Boltzmann equation into a differential operator which is much easier to manipulate than the integral form and does not require a relaxation time approximation. The spatial diffusion of highly energetic electrons is calculated and discussed in context with high speed velocity transients ("ballistic transport"). Explicit results compare favorably with sophisticated Monte Carlo simulations and are well suited to treat complex transport problems in submicron III-V devices. As an example we calculate the current voltage characteristic of a "camel-back diode".

UR - http://www.scopus.com/inward/record.url?scp=49049123411&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49049123411&partnerID=8YFLogxK

U2 - 10.1016/0378-4363(83)90484-9

DO - 10.1016/0378-4363(83)90484-9

M3 - Article

AN - SCOPUS:49049123411

SN - 0378-4363

VL - 117-118

SP - 211

EP - 213

JO - Physica B+C

JF - Physica B+C

IS - PART 1

ER -

High energy diffusion equation for polar semiconductors

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this