@inproceedings{bd73d7696fab4c25bc75da87024438f3,
title = "High-efficiency thin-film InGaP/(In)GaAs/Ge multijunction solar cells enabled by controlled spalling technology",
abstract = "We demonstrate the effectiveness of our disruptive controlled spalling technology for making high-efficiency (28.7%) thin-film InGaP/(In)GaAs/Ge tandem solar cells. The controlled spalling technique was employed to separate the thin-film tandem cells (∼14μm) from the host Ge substrates. The electrical characteristics of the thin-film cells (spalled) were examined and compared against the bulk cells (non-spalled) on original Ge wafers. Furthermore, the structural integrity of the transferred thin-film cells was scrutinized using transmission electron microscopy. Our results confirm that the structural properties and the intrinsic material parameters (such as minority carrier lifetime, surface recombination velocity, etc) of the thin-film tandem solar cells are unchanged after spalling.",
keywords = "layer transfer, tandem junction, thin-film",
author = "D. Shahrjerdi and Bedell, {S. W.} and C. Ebert and C. Bayram and B. Hekmatshoar and K. Fogel and P. Lauro and M. Gaynes and Ott, {J. A.} and T. Gokmen and Sadana, {D. K.}",
year = "2012",
doi = "10.1109/PVSC.2012.6317765",
language = "English (US)",
isbn = "9781467300643",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
pages = "974--977",
booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",
note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",
}