Abstract
Structure based on aluminum-oxide layers have led to dramatic improvements in VCSELs such as power conversion efficiencies in excess of 50% and threshold currents below 10μA. The low index, insulating aluminum-oxide, formed by selective wet thermal oxidation of AlGaAs, serves as an effective index guide as well as a current injection aperture. This paper presents data on devices with either two aligned apertures above and below the active region or with a single effective aperture above the active region leading to slope efficiencies of up to 1W/A.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 445-446 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| State | Published - 1995 |
| Externally published | Yes |
| Event | Proceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) - San Francisco, CA, USA Duration: Oct 30 1995 → Nov 2 1995 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering