High-efficiency GaAs power MESFETs prepared by ion implantation

M. Feng, H. Kanber, V. K. Eu, M. Siracusa

Research output: Contribution to journalArticlepeer-review

Fingerprint Dive into the research topics of 'High-efficiency GaAs power MESFETs prepared by ion implantation'. Together they form a unique fingerprint.

Engineering & Materials Science