High-efficiency GaAs power MESFETs prepared by ion implantation

M. Feng; H. Kanber; V. K. Eu; M. Siracusa

doi:10.1049/el:19820749

High-efficiency GaAs power MESFETs prepared by ion implantation

M. Feng, H. Kanber, V. K. Eu, M. Siracusa

Research output: Contribution to journal › Article › peer-review

Abstract

GaAs power MESFETs have been fabricated using ion implantation to form channel layers. A 1 μm gate length by 2400 μm gate width device has demonstrated an output power of 1-63 W with 6-9 dB associated gain, 35% poweradded efficiency and 9-7 dB linear gain at 10 GHz. The transconductance of this device is 280 mS, which corresponds to 117 mS/mm. This result demonstrates that excellent GaAs power MESFETs can be made by ion implantation, and is comparable to average results demonstrated by devices made by AsCl₃ vapour phase epitaxy.

Original language	English (US)
Pages (from-to)	1097-1099
Number of pages	3
Journal	Electronics Letters
Volume	18
DOIs	https://doi.org/10.1049/el:19820749
State	Published - Dec 9 1982
Externally published	Yes

Keywords

Ion implantation
Power transistors
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:19820749

Library availability

Discover UIUC Full Text

Cite this

@article{3abdfccceaf249518630aa206e2045e9,

title = "High-efficiency GaAs power MESFETs prepared by ion implantation",

abstract = "GaAs power MESFETs have been fabricated using ion implantation to form channel layers. A 1 μm gate length by 2400 μm gate width device has demonstrated an output power of 1-63 W with 6-9 dB associated gain, 35% poweradded efficiency and 9-7 dB linear gain at 10 GHz. The transconductance of this device is 280 mS, which corresponds to 117 mS/mm. This result demonstrates that excellent GaAs power MESFETs can be made by ion implantation, and is comparable to average results demonstrated by devices made by AsCl3 vapour phase epitaxy.",

keywords = "Ion implantation, Power transistors, Semiconductor devices and materials",

author = "M. Feng and H. Kanber and Eu, {V. K.} and M. Siracusa",

year = "1982",

month = dec,

day = "9",

doi = "10.1049/el:19820749",

language = "English (US)",

volume = "18",

pages = "1097--1099",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

}

TY - JOUR

T1 - High-efficiency GaAs power MESFETs prepared by ion implantation

AU - Feng, M.

AU - Kanber, H.

AU - Eu, V. K.

AU - Siracusa, M.

PY - 1982/12/9

Y1 - 1982/12/9

N2 - GaAs power MESFETs have been fabricated using ion implantation to form channel layers. A 1 μm gate length by 2400 μm gate width device has demonstrated an output power of 1-63 W with 6-9 dB associated gain, 35% poweradded efficiency and 9-7 dB linear gain at 10 GHz. The transconductance of this device is 280 mS, which corresponds to 117 mS/mm. This result demonstrates that excellent GaAs power MESFETs can be made by ion implantation, and is comparable to average results demonstrated by devices made by AsCl3 vapour phase epitaxy.

AB - GaAs power MESFETs have been fabricated using ion implantation to form channel layers. A 1 μm gate length by 2400 μm gate width device has demonstrated an output power of 1-63 W with 6-9 dB associated gain, 35% poweradded efficiency and 9-7 dB linear gain at 10 GHz. The transconductance of this device is 280 mS, which corresponds to 117 mS/mm. This result demonstrates that excellent GaAs power MESFETs can be made by ion implantation, and is comparable to average results demonstrated by devices made by AsCl3 vapour phase epitaxy.

KW - Ion implantation

KW - Power transistors

KW - Semiconductor devices and materials

UR - http://www.scopus.com/inward/record.url?scp=0020478404&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020478404&partnerID=8YFLogxK

U2 - 10.1049/el:19820749

DO - 10.1049/el:19820749

M3 - Article

AN - SCOPUS:0020478404

SN - 0013-5194

VL - 18

SP - 1097

EP - 1099

JO - Electronics Letters

JF - Electronics Letters

ER -

High-efficiency GaAs power MESFETs prepared by ion implantation

Abstract

Keywords

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this