GaAs power MESFETs have been fabricated using ion implantation to form channel layers. A 1 μm gate length by 2400 μm gate width device has demonstrated an output power of 1-63 W with 6-9 dB associated gain, 35% poweradded efficiency and 9-7 dB linear gain at 10 GHz. The transconductance of this device is 280 mS, which corresponds to 117 mS/mm. This result demonstrates that excellent GaAs power MESFETs can be made by ion implantation, and is comparable to average results demonstrated by devices made by AsCl3 vapour phase epitaxy.
- Ion implantation
- Power transistors
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering