High-efficiency GaAs power MESFETs prepared by ion implantation

M. Feng, H. Kanber, V. K. Eu, M. Siracusa

Research output: Contribution to journalArticle

Abstract

GaAs power MESFETs have been fabricated using ion implantation to form channel layers. A 1 μm gate length by 2400 μm gate width device has demonstrated an output power of 1-63 W with 6-9 dB associated gain, 35% poweradded efficiency and 9-7 dB linear gain at 10 GHz. The transconductance of this device is 280 mS, which corresponds to 117 mS/mm. This result demonstrates that excellent GaAs power MESFETs can be made by ion implantation, and is comparable to average results demonstrated by devices made by AsCl3 vapour phase epitaxy.

Original languageEnglish (US)
Pages (from-to)1097-1099
Number of pages3
JournalElectronics Letters
Volume18
DOIs
StatePublished - Dec 9 1982

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Ion implantation
Vapor phase epitaxy
Transconductance

Keywords

  • Ion implantation
  • Power transistors
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

High-efficiency GaAs power MESFETs prepared by ion implantation. / Feng, M.; Kanber, H.; Eu, V. K.; Siracusa, M.

In: Electronics Letters, Vol. 18, 09.12.1982, p. 1097-1099.

Research output: Contribution to journalArticle

Feng, M. ; Kanber, H. ; Eu, V. K. ; Siracusa, M. / High-efficiency GaAs power MESFETs prepared by ion implantation. In: Electronics Letters. 1982 ; Vol. 18. pp. 1097-1099.
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