High Drain Current—Voltage Product of Submicrometer-Gate Ion-Implanted GaAs MESFET's for Millimeter-Wave Operation

Tony Hwang, Milton Feng

Research output: Contribution to journalArticle

Abstract

Ion-implanted GaAs MESFET's with gate lengths of 0.3 and 0.5 p.m have been fabricated using optical lithography. The devices with 0.3 and 0.5-μm gate lengths exhibit extrinsic transconductances, at zero gate bias, of 200 and 180 mS / mm at drain currents of 400 and 420 mA / mm, respectively. The gate-to-drain diode characteristics of these two different gate-length devices show similar breakdown voltages of 13–15 V. From S-parameter measurements, respective current-gain cutoff frequencies, ft's, of 56 and 30 GHz are obtained for 0.3 and 0.5-μm gate-length devices. The high drain current-voltage product and the microwave performance indicate that ion-implanted technology has the potential to be used to manufacture power devices for millimeter-wave applications.

Original languageEnglish (US)
Pages (from-to)445-447
Number of pages3
JournalIEEE Electron Device Letters
Volume13
Issue number9
DOIs
StatePublished - Sep 1992

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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