Subhalf-micrometre gate length ion-implanted GaAs MESFETs have been fabricated on 3 inch diameter substrates using trilayer deep UV lithography. Implanted MESFETs with 0.3µm gate lengths exhibit a maximum extrinsic transconductance of 205 mS/mm at a drain current of 600 mA/mm. From S-parameter measurements, a current gain cutoff frequency f1of 56GHz and a maximum available gain cutoff frequency fmaxgreater than 90 GHz are achieved. The gate-to-drain diode characteristics of the devices show a sharp breakdown voltage of 13-15 V. The high drain currentdrain voltage and microwave characteristics indicate that ion-implanted technology with trilayer deep UV lithography has potential for the manufacture of power devices and amplifiers for Q-band communication applications. This is the first reported result using trilayer deep UV lithography to demonstrate both f1, over 56GHz and 13-15V gate to-drain breakdown on 0.3µm an gate-length ion-implanted GaAs MESFETs.
- Field-effect transistors
ASJC Scopus subject areas
- Electrical and Electronic Engineering