High Current Density Diamond Photoconductive Semiconductor Switches with a Buried, Metallic Conductive Channel

Zhuoran Han; Jaekwon Lee; Stephen Messing; Thomas Reboli; Andrey Mironov; Can Bayram

doi:10.1109/LED.2024.3387325

High Current Density Diamond Photoconductive Semiconductor Switches with a Buried, Metallic Conductive Channel

Zhuoran Han, Jaekwon Lee, Stephen Messing, Thomas Reboli, Andrey Mironov, Can Bayram

Research output: Contribution to journal › Article › peer-review

Abstract

Laterally configured diamond photoconductive semiconductor switches (PCSS) with a buried, metallic p+ current channel are reported. Above bandgap (λ ≤ 226nm) optical triggering enables responsivity of over 130 mA/W. The use of low-impurity semi-insulating diamond as an active absorption layer enables fast rise and fall times (2 ns) and on/off ratios greater than 1011. The PCSS excited with a laser energy of 20 nJ per pulse passes a high current density (44 A/cm) under a DC bias of 60 V, thanks to the buried metallic p+ current channel. The reported devices promise high current carrying capacity without the need for filamenting while leveraging the excellent optical, electronic, and thermal properties of diamond.

Original language	English (US)
Pages (from-to)	1044-1047
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	45
Issue number	6
DOIs	https://doi.org/10.1109/LED.2024.3387325
State	Published - Jun 1 2024
Externally published	Yes

Keywords

Diamond
light triggered switches
photoconducting devices
power electronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/LED.2024.3387325

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title = "High Current Density Diamond Photoconductive Semiconductor Switches with a Buried, Metallic Conductive Channel",

abstract = "Laterally configured diamond photoconductive semiconductor switches (PCSS) with a buried, metallic p+ current channel are reported. Above bandgap (λ ≤ 226nm) optical triggering enables responsivity of over 130 mA/W. The use of low-impurity semi-insulating diamond as an active absorption layer enables fast rise and fall times (2 ns) and on/off ratios greater than 1011. The PCSS excited with a laser energy of 20 nJ per pulse passes a high current density (44 A/cm) under a DC bias of 60 V, thanks to the buried metallic p+ current channel. The reported devices promise high current carrying capacity without the need for filamenting while leveraging the excellent optical, electronic, and thermal properties of diamond.",

keywords = "Diamond, light triggered switches, photoconducting devices, power electronics",

author = "Zhuoran Han and Jaekwon Lee and Stephen Messing and Thomas Reboli and Andrey Mironov and Can Bayram",

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AU - Han, Zhuoran

AU - Lee, Jaekwon

AU - Messing, Stephen

AU - Reboli, Thomas

AU - Mironov, Andrey

AU - Bayram, Can

PY - 2024/6/1

Y1 - 2024/6/1

N2 - Laterally configured diamond photoconductive semiconductor switches (PCSS) with a buried, metallic p+ current channel are reported. Above bandgap (λ ≤ 226nm) optical triggering enables responsivity of over 130 mA/W. The use of low-impurity semi-insulating diamond as an active absorption layer enables fast rise and fall times (2 ns) and on/off ratios greater than 1011. The PCSS excited with a laser energy of 20 nJ per pulse passes a high current density (44 A/cm) under a DC bias of 60 V, thanks to the buried metallic p+ current channel. The reported devices promise high current carrying capacity without the need for filamenting while leveraging the excellent optical, electronic, and thermal properties of diamond.

AB - Laterally configured diamond photoconductive semiconductor switches (PCSS) with a buried, metallic p+ current channel are reported. Above bandgap (λ ≤ 226nm) optical triggering enables responsivity of over 130 mA/W. The use of low-impurity semi-insulating diamond as an active absorption layer enables fast rise and fall times (2 ns) and on/off ratios greater than 1011. The PCSS excited with a laser energy of 20 nJ per pulse passes a high current density (44 A/cm) under a DC bias of 60 V, thanks to the buried metallic p+ current channel. The reported devices promise high current carrying capacity without the need for filamenting while leveraging the excellent optical, electronic, and thermal properties of diamond.

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KW - light triggered switches

KW - photoconducting devices

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High Current Density Diamond Photoconductive Semiconductor Switches with a Buried, Metallic Conductive Channel

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Keywords

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