High-current AlGaN/GaN high electron mobility transistors achieved by selective-area growth via plasma-assisted molecular beam epitaxy

Liang Pang, Philip T Krein, Ki Won Kim, Jung Hee Lee, Kyekyoon Kim

Research output: Contribution to journalArticlepeer-review

Abstract

We report on AlGaN/GaN high electron mobility transistors (HEMTs) for high current operation achieved by selective area growth (SAG) technique based on plasma-assisted molecular beam epitaxy (PAMBE). Significant improvement in DC characteristics of the multiple-gate-finger HEMTs was demonstrated when SAG was employed. Furthermore, when group of HEMTs were interconnected, the resulted large-periphery device, with the total gate width of 5.2 mm, exhibited a maximum current of 1.75 A and an on-state resistance of 4.76 mΩ cm2, showing the efficacy of PAMBE-SAG to fabricate GaN-based HEMTs for high-power applications.

Original languageEnglish (US)
Pages (from-to)180-183
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume211
Issue number1
DOIs
StatePublished - Jan 1 2014

Keywords

  • AlGaN/GaN HEMT
  • Ohmic contact
  • plasma-assisted molecular beam epitaxy
  • selective area growth

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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