Hierarchy of simulation approaches for hot carrier transport in deep sub-micron devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The purpose of this brief review is to survey the hierarchy of physical approaches for semiconductor transport and device simulation, giving an indication of the limits of applicability and approximations underlying the various approaches. The main focus is on the relevance of the approaches for the simulation of hot carrier effects in deeply scaled devices.

Original languageEnglish (US)
Title of host publicationExtended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages100-103
Number of pages4
ISBN (Electronic)0780343697, 9780780343696
DOIs
StatePublished - 1998
Event6th International Workshop on Computational Electronics, IWCE 1998 - Osaka, Japan
Duration: Oct 19 1998Oct 21 1998

Publication series

NameExtended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
Volume1998-October

Other

Other6th International Workshop on Computational Electronics, IWCE 1998
CountryJapan
CityOsaka
Period10/19/9810/21/98

ASJC Scopus subject areas

  • Modeling and Simulation
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Mathematical Physics

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