Hierarchy of simulation approaches for hot carrier transport in deep sub-micron devices

U. Ravaioli

doi:10.1109/IWCE.1998.742720

Hierarchy of simulation approaches for hot carrier transport in deep sub-micron devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The purpose of this brief review is to survey the hierarchy of physical approaches for semiconductor transport and device simulation, giving an indication of the limits of applicability and approximations underlying the various approaches. The main focus is on the relevance of the approaches for the simulation of hot carrier effects in deeply scaled devices.

Original language	English (US)
Title of host publication	Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	100-103
Number of pages	4
ISBN (Electronic)	0780343697, 9780780343696
DOIs	https://doi.org/10.1109/IWCE.1998.742720
State	Published - 1998
Event	6th International Workshop on Computational Electronics, IWCE 1998 - Osaka, Japan Duration: Oct 19 1998 → Oct 21 1998

Publication series

Name	Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
Volume	1998-October

Other

Other	6th International Workshop on Computational Electronics, IWCE 1998
Country/Territory	Japan
City	Osaka
Period	10/19/98 → 10/21/98

ASJC Scopus subject areas

Modeling and Simulation
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Mathematical Physics

Online availability

10.1109/IWCE.1998.742720

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Ravaioli, U. (1998). Hierarchy of simulation approaches for hot carrier transport in deep sub-micron devices. In Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998 (pp. 100-103). Article 742720 (Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998; Vol. 1998-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWCE.1998.742720

Hierarchy of simulation approaches for hot carrier transport in deep sub-micron devices. / Ravaioli, U.
Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998. Institute of Electrical and Electronics Engineers Inc., 1998. p. 100-103 742720 (Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998; Vol. 1998-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ravaioli, U 1998, Hierarchy of simulation approaches for hot carrier transport in deep sub-micron devices. in Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998., 742720, Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998, vol. 1998-October, Institute of Electrical and Electronics Engineers Inc., pp. 100-103, 6th International Workshop on Computational Electronics, IWCE 1998, Osaka, Japan, 10/19/98. https://doi.org/10.1109/IWCE.1998.742720

Ravaioli U. Hierarchy of simulation approaches for hot carrier transport in deep sub-micron devices. In Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998. Institute of Electrical and Electronics Engineers Inc. 1998. p. 100-103. 742720. (Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998). doi: 10.1109/IWCE.1998.742720

@inproceedings{d4d19c7f9e0247678b5538095bb5a62e,

title = "Hierarchy of simulation approaches for hot carrier transport in deep sub-micron devices",

abstract = "The purpose of this brief review is to survey the hierarchy of physical approaches for semiconductor transport and device simulation, giving an indication of the limits of applicability and approximations underlying the various approaches. The main focus is on the relevance of the approaches for the simulation of hot carrier effects in deeply scaled devices.",

author = "U. Ravaioli",

note = "Funding Information: This work was partially supported by the Semiconductor Research Corporation, contract 98-SJ-406, and by the National Center for Computational Electronics (NCCE) , National Science Foundation grant ECS 95-26127. Funding Information: Acknowledgments - This work was partially supported by the Semiconductor Research Corporation, contract 98-SJ-406, and by the National Center for Computational Electronics (NCCE) , National Science Foundation grant ECS 95-26127. References Publisher Copyright: {\textcopyright} 1996 IEEE.; 6th International Workshop on Computational Electronics, IWCE 1998 ; Conference date: 19-10-1998 Through 21-10-1998",

year = "1998",

doi = "10.1109/IWCE.1998.742720",

language = "English (US)",

series = "Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "100--103",

booktitle = "Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998",

address = "United States",

}

TY - GEN

T1 - Hierarchy of simulation approaches for hot carrier transport in deep sub-micron devices

AU - Ravaioli, U.

N1 - Funding Information: This work was partially supported by the Semiconductor Research Corporation, contract 98-SJ-406, and by the National Center for Computational Electronics (NCCE) , National Science Foundation grant ECS 95-26127. Funding Information: Acknowledgments - This work was partially supported by the Semiconductor Research Corporation, contract 98-SJ-406, and by the National Center for Computational Electronics (NCCE) , National Science Foundation grant ECS 95-26127. References Publisher Copyright: © 1996 IEEE.

PY - 1998

Y1 - 1998

N2 - The purpose of this brief review is to survey the hierarchy of physical approaches for semiconductor transport and device simulation, giving an indication of the limits of applicability and approximations underlying the various approaches. The main focus is on the relevance of the approaches for the simulation of hot carrier effects in deeply scaled devices.

AB - The purpose of this brief review is to survey the hierarchy of physical approaches for semiconductor transport and device simulation, giving an indication of the limits of applicability and approximations underlying the various approaches. The main focus is on the relevance of the approaches for the simulation of hot carrier effects in deeply scaled devices.

UR - http://www.scopus.com/inward/record.url?scp=85051532876&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85051532876&partnerID=8YFLogxK

U2 - 10.1109/IWCE.1998.742720

DO - 10.1109/IWCE.1998.742720

M3 - Conference contribution

AN - SCOPUS:85051532876

T3 - Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998

SP - 100

EP - 103

BT - Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th International Workshop on Computational Electronics, IWCE 1998

Y2 - 19 October 1998 through 21 October 1998

ER -

Hierarchy of simulation approaches for hot carrier transport in deep sub-micron devices

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