TY - GEN
T1 - Hierarchy of simulation approaches for hot carrier transport in deep sub-micron devices
AU - Ravaioli, U.
N1 - Publisher Copyright:
© 1996 IEEE.
PY - 1998
Y1 - 1998
N2 - The purpose of this brief review is to survey the hierarchy of physical approaches for semiconductor transport and device simulation, giving an indication of the limits of applicability and approximations underlying the various approaches. The main focus is on the relevance of the approaches for the simulation of hot carrier effects in deeply scaled devices.
AB - The purpose of this brief review is to survey the hierarchy of physical approaches for semiconductor transport and device simulation, giving an indication of the limits of applicability and approximations underlying the various approaches. The main focus is on the relevance of the approaches for the simulation of hot carrier effects in deeply scaled devices.
UR - http://www.scopus.com/inward/record.url?scp=85051532876&partnerID=8YFLogxK
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U2 - 10.1109/IWCE.1998.742720
DO - 10.1109/IWCE.1998.742720
M3 - Conference contribution
AN - SCOPUS:85051532876
T3 - Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
SP - 100
EP - 103
BT - Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Computational Electronics, IWCE 1998
Y2 - 19 October 1998 through 21 October 1998
ER -