Hierarchy of simulation approaches for hot carrier transport in deep submicron devices

Research output: Contribution to journalReview article


Rapid advances in integrated circuit technology are pushing the size of semiconductor devices into the deep submicron range. The traditional simulation approaches based on simplified transport equations are not adequate to capture the behaviour of high-energy carriers that are responsible for nonlinear transport behaviour and reliability problems. This brief review examines the complete hierarchy of device simulation approaches and analyses the capabilities and limitations of the various approaches that are available today.

Original languageEnglish (US)
Pages (from-to)1-10
Number of pages10
JournalSemiconductor Science and Technology
Issue number1
StatePublished - Jan 1 1998


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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