Abstract
Rapid advances in integrated circuit technology are pushing the size of semiconductor devices into the deep submicron range. The traditional simulation approaches based on simplified transport equations are not adequate to capture the behaviour of high-energy carriers that are responsible for nonlinear transport behaviour and reliability problems. This brief review examines the complete hierarchy of device simulation approaches and analyses the capabilities and limitations of the various approaches that are available today.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1-10 |
| Number of pages | 10 |
| Journal | Semiconductor Science and Technology |
| Volume | 13 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1 1998 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Hierarchy of simulation approaches for hot carrier transport in deep submicron devices. / Ravaioli, Umberto.
In: Semiconductor Science and Technology, Vol. 13, No. 1, 01.01.1998, p. 1-10.Research output: Contribution to journal › Review article
}
TY - JOUR
T1 - Hierarchy of simulation approaches for hot carrier transport in deep submicron devices
AU - Ravaioli, Umberto
PY - 1998/1/1
Y1 - 1998/1/1
N2 - Rapid advances in integrated circuit technology are pushing the size of semiconductor devices into the deep submicron range. The traditional simulation approaches based on simplified transport equations are not adequate to capture the behaviour of high-energy carriers that are responsible for nonlinear transport behaviour and reliability problems. This brief review examines the complete hierarchy of device simulation approaches and analyses the capabilities and limitations of the various approaches that are available today.
AB - Rapid advances in integrated circuit technology are pushing the size of semiconductor devices into the deep submicron range. The traditional simulation approaches based on simplified transport equations are not adequate to capture the behaviour of high-energy carriers that are responsible for nonlinear transport behaviour and reliability problems. This brief review examines the complete hierarchy of device simulation approaches and analyses the capabilities and limitations of the various approaches that are available today.
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U2 - 10.1088/0268-1242/13/1/002
DO - 10.1088/0268-1242/13/1/002
M3 - Review article
AN - SCOPUS:0343347619
VL - 13
SP - 1
EP - 10
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 1
ER -