Hidden charge 2e boson in doped Mott insulators

Research output: Contribution to journalArticlepeer-review

Abstract

We construct the low-energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a charge 2e bosonic field emerges at low energy. The charge 2e boson mediates dynamical spectral weight transfer across the Mott gap and creates a new charge e excitation by binding a hole. The result is a bifurcation of the electron dispersion below the chemical potential as observed recently in angle-resolved photoemission on Pb-doped Bi2Sr2CaCu2O8+δ (Pb2212).

Original languageEnglish (US)
Article number046404
JournalPhysical review letters
Volume99
Issue number4
DOIs
StatePublished - Jul 25 2007

ASJC Scopus subject areas

  • General Physics and Astronomy

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