HfO2 and HfAlO for CMOS: Thermal stability and current transport

W. Zhu, T. P. Ma, T. Tamagawa, Y. Di, J. Kim, R. Carruthers, M. Gibson, T. Furukawa

Research output: Contribution to journalConference article

Abstract

This paper reports the thermal stability of HfO2 with/without Al inclusion (based on XRD and leakage current data), and energy band diagrams for metal/HfO2/Si structures as well as associated current transport mechanisms (based on gate current characteristics at various temperatures).

Original languageEnglish (US)
Pages (from-to)463-466
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 2001
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: Dec 2 2001Dec 5 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Zhu, W., Ma, T. P., Tamagawa, T., Di, Y., Kim, J., Carruthers, R., Gibson, M., & Furukawa, T. (2001). HfO2 and HfAlO for CMOS: Thermal stability and current transport. Technical Digest - International Electron Devices Meeting, 463-466.