Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction

Angus Rockett (Inventor), Xiaoqing He (Inventor)

Research output: Patent

Abstract

A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.
Original languageEnglish (US)
U.S. patent number10446706
StatePublished - Oct 15 2019

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