Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction

Angus Rockett; Xiaoqing He

Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction

Angus Rockett (Inventor), Xiaoqing He (Inventor)

Research output: Patent

Abstract

A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.

Original language	English (US)
U.S. patent number	10446706
Filing date	5/12/16
State	Published - Oct 15 2019

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@misc{a3204bc9a193402dadef5c64943c8561,

title = "Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction",

abstract = "A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.",

author = "Angus Rockett and Xiaoqing He",

note = "This invention was made with government support under grant number CPS 25853 awarded by the Department of Energy through the DOE/EERE SunShot BRIDGE program. The government has certain rights in the invention.; 10446706",

year = "2019",

month = oct,

day = "15",

language = "English (US)",

type = "Patent",

}

TY - PAT

T1 - Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction

AU - Rockett, Angus

AU - He, Xiaoqing

N1 - This invention was made with government support under grant number CPS 25853 awarded by the Department of Energy through the DOE/EERE SunShot BRIDGE program. The government has certain rights in the invention.

PY - 2019/10/15

Y1 - 2019/10/15

N2 - A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.

AB - A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.

M3 - Patent

M1 - 10446706

Y2 - 2016/05/12

ER -

Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction

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