Abstract
A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.
| Original language | English (US) |
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| U.S. patent number | 10446706 |
| Filing date | 5/12/16 |
| State | Published - Oct 15 2019 |