Heterostructures based on inorganic and organic van der Waals systems

Gwan Hyoung Lee, Chul Ho Lee, Arend M. Van Der Zande, Minyong Han, Xu Cui, Ghidewon Arefe, Colin Nuckolls, Tony F. Heinz, James Hone, Philip Kim

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Abstract

The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.

Original languageEnglish (US)
Article number092511
JournalAPL Materials
Volume2
Issue number9
DOIs
StatePublished - Jan 1 2014

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ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

Cite this

Lee, G. H., Lee, C. H., Van Der Zande, A. M., Han, M., Cui, X., Arefe, G., Nuckolls, C., Heinz, T. F., Hone, J., & Kim, P. (2014). Heterostructures based on inorganic and organic van der Waals systems. APL Materials, 2(9), [092511]. https://doi.org/10.1063/1.4894435