Heterostructures based on inorganic and organic van der Waals systems

Gwan Hyoung Lee; Chul Ho Lee; Arend M. Van Der Zande; Minyong Han; Xu Cui; Ghidewon Arefe; Colin Nuckolls; Tony F. Heinz; James Hone; Philip Kim

doi:10.1063/1.4894435

Heterostructures based on inorganic and organic van der Waals systems

Gwan Hyoung Lee, Chul Ho Lee, Arend M. Van Der Zande, Minyong Han, Xu Cui, Ghidewon Arefe, Colin Nuckolls, Tony F. Heinz, James Hone, Philip Kim

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Abstract

The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS₂ heterostructures for memory devices; graphene/MoS₂/WSe₂/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.

Original language	English (US)
Article number	092511
Journal	APL Materials
Volume	2
Issue number	9
DOIs	https://doi.org/10.1063/1.4894435
State	Published - Sep 2014
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
General Engineering

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10.1063/1.4894435

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title = "Heterostructures based on inorganic and organic van der Waals systems",

abstract = "The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.",

author = "Lee, {Gwan Hyoung} and Lee, {Chul Ho} and {Van Der Zande}, {Arend M.} and Minyong Han and Xu Cui and Ghidewon Arefe and Colin Nuckolls and Heinz, {Tony F.} and James Hone and Philip Kim",

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AU - Lee, Gwan Hyoung

AU - Lee, Chul Ho

AU - Van Der Zande, Arend M.

AU - Han, Minyong

AU - Cui, Xu

AU - Arefe, Ghidewon

AU - Nuckolls, Colin

AU - Heinz, Tony F.

AU - Hone, James

AU - Kim, Philip

PY - 2014/9

Y1 - 2014/9

N2 - The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.

AB - The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.

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Heterostructures based on inorganic and organic van der Waals systems

Abstract

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