Heterostructure p-n junction tunnel diodes

D. J. Day, Y. Chung, C. Webb, J. N. Eckstein, J. M. Xu, M. Sweeny

Research output: Contribution to journalArticlepeer-review


Heterostructure p-n junction tunnel diodes with high peak to valley ratios (12: 1) at room temperature are demonstrated. The variation of peak and valley currents in diodes with different tunnel barriers is described, and the mechanisms responsible for the valley current and its temperature dependence are proposed. Ways to improve the peak to valley ratio and reduce junction capacitance are discussed.

Original languageEnglish (US)
Pages (from-to)1140-1142
Number of pages3
JournalApplied Physics Letters
Issue number11
StatePublished - 1990
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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