Heterojunction semiconductor device with <001> tilt

Hadis Morkoc (Inventor), Russ Fischer (Inventor)

Research output: Patent


A method is disclosed of epitaxially depositing a semiconductor material on a substrate of different material while accommodating lattice mismatch in a manner that results in improved epitaxially deposited material. In a disclosed embodiment GaAs is epitaxially deposited by molecular beam epitaxy on a silicon substrate having a {100} crystallographic surface tilted in the <001> direction. Improved semiconductor devices, made using the disclosed technique, are also set forth.
Original languageEnglish (US)
U.S. patent number4872046
Filing date9/1/87
StatePublished - Oct 3 1989


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