Abstract
A method is disclosed of epitaxially depositing a semiconductor material on a substrate of different material while accommodating lattice mismatch in a manner that results in improved epitaxially deposited material. In a disclosed embodiment GaAs is epitaxially deposited by molecular beam epitaxy on a silicon substrate having a {100} crystallographic surface tilted in the <001> direction. Improved semiconductor devices, made using the disclosed technique, are also set forth.
| Original language | English (US) |
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| U.S. patent number | 4872046 |
| Filing date | 9/1/87 |
| State | Published - Oct 3 1989 |