Heterojunction ion-implanted FET's (HIFET's)

G. W. Wang, M. Feng, Y. P. Liaw, R. Kaliski, C. L. Lau, Y. Chang, C. Ito

Research output: Contribution to journalConference articlepeer-review

Abstract

Summary form only given. The authors report the enhanced microwave performance of ion-implanted MESFETs fabricated on graded GaAs/AlGaAs heterostructures. Since low-noise MESFETs are typically biased at a low drain current, optimum low-noise operation requires high ft at low drain currents. ft values reported in the literature are generally measured close to Idss. This 0.5-μm gate heterojunction ion-implanted FET (HIFET) exhibits enhanced microwave performance, especially at low drain current, when compared to conventional ion-implanted GaAs MESFETs. At 20% of Idss, the current gain cutoff frequency ft is 40 GHz, which increases to 47 GHz at 50% of Idss. At 100% of Idss, the ft is 41 GHz. The maximum stable gain at 25 GHz of the HIFET is also 4 dB higher than that of the conventional MESFET.

Original languageEnglish (US)
Number of pages1
JournalIEEE Transactions on Electron Devices
Volume36
Issue number11 pt 1
StatePublished - Nov 1 1989
Externally publishedYes
EventPhotovoltaic Module Reliability Workshop - Golden, CO, USA
Duration: Jun 21 1989Jun 21 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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