Heterogeneously integrated VCSELs on silicon

Keyphrases

• Vertical-cavity Surface-emitting Laser (VCSEL) 100%
• Wafer 50%
• III-V 50%
• Epitaxial 50%
• Gallium Arsenide 33%
• Transfer Process 33%
• Photonic Devices 33%
• Carrier Wafer 33%
• As-grown 16%
• Electrical Performance 16%
• Epitaxy 16%
• Wafer-scale 16%
• AlGaAs 16%
• Heterogeneous Integration 16%
• 3D Imaging 16%
• Silicon Wafer 16%
• GaAs Substrate 16%
• Optical Performance 16%
• Photolithography 16%
• Wavelength Shift 16%
• Gold Metal 16%
• Dry Etching 16%
• Bonding Process 16%
• Processing Methods 16%
• CMOS Technology 16%
• Power Output 16%
• Metal Bond 16%
• Device Processing 16%
• Metallic Bonding 16%
• Flip chip 16%
• LiDAR 16%
• Substrate Removal 16%
• Continuous-wave Excitation 16%
• Silicon CMOS 16%
• Photonic Device Fabrication 16%
• Imaging Array 16%
• Gold Contacts 16%
• Epitaxial Transfer 16%
• III-V Photonics 16%
• CMOS Imaging 16%
• Thermal Path 16%
• Wafer Process 16%
• Temporary Bonding Material 16%

Engineering

• Photonic Devices 100%
• Gallium Arsenide 66%
• Transfer Process 66%
• Thin Films 33%
• Emitting Laser 33%
• Continuous Wave 33%
• Electrical Performance 33%
• Aluminium Gallium Arsenide 33%
• Optical Lithography 33%
• Silicon Wafer 33%
• Gaas Substrate 33%
• Output Power 33%
• Optical Performance 33%
• Processing Method 33%
• Dry Etching 33%
• Bonding Process 33%
• Cavity Surface 33%
• Bonding Material 33%

Material Science

• Silicon 100%
• Optical Device 42%
• Gallium Arsenide 42%
• Transfer Process 28%
• Thin Films 14%
• Epitaxy 14%
• Device Fabrication 14%
• Silicon Wafer 14%
• Aluminium Gallium Arsenide 14%
• Metallic Bonding 14%
• Dry Etching 14%