TY - JOUR
T1 - Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials
T2 - Processes, Applications, and Perspectives
AU - Choi, Soo Ho
AU - Kim, Yongsung
AU - Jeon, Il
AU - Kim, Hyunseok
N1 - This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Education (RS\u20102023\u201000228994, 2023R1A2C3007358) and Ministry of Science and ICT (RS\u20102024\u201000339626, RS\u20102024\u201004451173 and RS\u20102024\u201000445081), and also supported by the National Science Foundation (ECCS\u20102328839) and Samsung GRO program.
PY - 2024/10/19
Y1 - 2024/10/19
N2 - Wide-bandgap semiconductors (WBGs) are crucial building blocks of many modern electronic devices. However, there is significant room for improving the crystal quality, available choice of materials/heterostructures, scalability, and cost-effectiveness of WBGs. In this regard, utilizing layered 2D materials in conjunction with WBG is emerging as a promising solution. This review presents recent advancements in the integration of WBGs and 2D materials, including fabrication techniques, mechanisms, devices, and novel functionalities. The properties of various WBGs and 2D materials, their integration techniques including epitaxial and nonepitaxial growth methods as well as transfer techniques, along with their advantages and challenges, are discussed. Additionally, devices and applications based on the WBG/2D heterostructures are introduced. Distinctive advantages of merging 2D materials with WBGs are described in detail, along with perspectives on strategies to overcome current challenges and unlock the unexplored potential of WBG/2D heterostructures.
AB - Wide-bandgap semiconductors (WBGs) are crucial building blocks of many modern electronic devices. However, there is significant room for improving the crystal quality, available choice of materials/heterostructures, scalability, and cost-effectiveness of WBGs. In this regard, utilizing layered 2D materials in conjunction with WBG is emerging as a promising solution. This review presents recent advancements in the integration of WBGs and 2D materials, including fabrication techniques, mechanisms, devices, and novel functionalities. The properties of various WBGs and 2D materials, their integration techniques including epitaxial and nonepitaxial growth methods as well as transfer techniques, along with their advantages and challenges, are discussed. Additionally, devices and applications based on the WBG/2D heterostructures are introduced. Distinctive advantages of merging 2D materials with WBGs are described in detail, along with perspectives on strategies to overcome current challenges and unlock the unexplored potential of WBG/2D heterostructures.
KW - 2D materials
KW - applications
KW - fabrication
KW - heterostructure
KW - wide-bandgap semiconductors
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U2 - 10.1002/adma.202411108
DO - 10.1002/adma.202411108
M3 - Review article
C2 - 39425567
AN - SCOPUS:85206584524
SN - 0935-9648
JO - Advanced Materials
JF - Advanced Materials
ER -