Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement

Jae Cheol Shin; Parsian K. Mohseni; Ki Jun Yu; Stephanie Tomasulo; Kyle H. Montgomery; Minjoo L. Lee; John A. Rogers; Xiuling Li

doi:10.1021/nn304784y

Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement

Jae Cheol Shin, Parsian K. Mohseni, Ki Jun Yu, Stephanie Tomasulo, Kyle H. Montgomery, Minjoo L. Lee, John A. Rogers, Xiuling Li

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate energy-conversion-efficiency (η) enhancement of silicon (Si) solar cells by the heterogeneous integration of an In_xGa _1-xAs nanowire (NW) array on the rear surface. The NWs are grown via a catalyst-free, self-assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped In_xGa _1-xAs (x ≈ 0.7) NW arrays are utilized as not only back-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybrid In_xGa_1-xAs NW-Si solar cell is increased over the entire solar response wavelength range; and η is enhanced by 36% in comparison to Si solar cells processed under the same condition without the NWs.

Original language	English (US)
Pages (from-to)	11074-11079
Number of pages	6
Journal	ACS Nano
Volume	6
Issue number	12
DOIs	https://doi.org/10.1021/nn304784y
State	Published - Dec 21 2012

Keywords

InGaAs
MOCVD
nanowires
silicon
solar cells

ASJC Scopus subject areas

General Engineering
General Materials Science
General Physics and Astronomy

Online availability

10.1021/nn304784y

Library availability

Discover UIUC Full Text

Cite this

@article{abe7281e782b476f96d8288c0e077849,

title = "Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement",

abstract = "We demonstrate energy-conversion-efficiency (η) enhancement of silicon (Si) solar cells by the heterogeneous integration of an InxGa 1-xAs nanowire (NW) array on the rear surface. The NWs are grown via a catalyst-free, self-assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped InxGa 1-xAs (x ≈ 0.7) NW arrays are utilized as not only back-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybrid InxGa1-xAs NW-Si solar cell is increased over the entire solar response wavelength range; and η is enhanced by 36% in comparison to Si solar cells processed under the same condition without the NWs.",

keywords = "InGaAs, MOCVD, nanowires, silicon, solar cells",

author = "Shin, {Jae Cheol} and Mohseni, {Parsian K.} and Yu, {Ki Jun} and Stephanie Tomasulo and Montgomery, {Kyle H.} and Lee, {Minjoo L.} and Rogers, {John A.} and Xiuling Li",

year = "2012",

month = dec,

day = "21",

doi = "10.1021/nn304784y",

language = "English (US)",

volume = "6",

pages = "11074--11079",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "12",

}

TY - JOUR

T1 - Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement

AU - Shin, Jae Cheol

AU - Mohseni, Parsian K.

AU - Yu, Ki Jun

AU - Tomasulo, Stephanie

AU - Montgomery, Kyle H.

AU - Lee, Minjoo L.

AU - Rogers, John A.

AU - Li, Xiuling

PY - 2012/12/21

Y1 - 2012/12/21

N2 - We demonstrate energy-conversion-efficiency (η) enhancement of silicon (Si) solar cells by the heterogeneous integration of an InxGa 1-xAs nanowire (NW) array on the rear surface. The NWs are grown via a catalyst-free, self-assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped InxGa 1-xAs (x ≈ 0.7) NW arrays are utilized as not only back-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybrid InxGa1-xAs NW-Si solar cell is increased over the entire solar response wavelength range; and η is enhanced by 36% in comparison to Si solar cells processed under the same condition without the NWs.

AB - We demonstrate energy-conversion-efficiency (η) enhancement of silicon (Si) solar cells by the heterogeneous integration of an InxGa 1-xAs nanowire (NW) array on the rear surface. The NWs are grown via a catalyst-free, self-assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped InxGa 1-xAs (x ≈ 0.7) NW arrays are utilized as not only back-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybrid InxGa1-xAs NW-Si solar cell is increased over the entire solar response wavelength range; and η is enhanced by 36% in comparison to Si solar cells processed under the same condition without the NWs.

KW - InGaAs

KW - MOCVD

KW - nanowires

KW - silicon

KW - solar cells

UR - http://www.scopus.com/inward/record.url?scp=84871533570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871533570&partnerID=8YFLogxK

U2 - 10.1021/nn304784y

DO - 10.1021/nn304784y

M3 - Article

C2 - 23128184

AN - SCOPUS:84871533570

SN - 1936-0851

VL - 6

SP - 11074

EP - 11079

JO - ACS Nano

JF - ACS Nano

IS - 12

ER -

Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement

Abstract

Keywords

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this