Heterogeneous Integration of III-V on Si: Overcoming the lattice-mismatch barrier via the 1D route

Jae Cheol Shin, Parsian Mohseni, Stephanie Tomasulo, Kyle Montgomery, Minjoo Lee, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

we demonstrate one-dimensional heteroepitaxy of InxGa1-xAs nanowires in the entire composition range on silicon substrates without dislocations. Doping and interfaces are characterized. Applications including improving the silicon solar cell efficiency will be presented.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2012
PublisherOptical Society of America (OSA)
PagesCF3J.7
ISBN (Print)9781557529435
DOIs
StatePublished - Jan 1 2012
EventCLEO: Science and Innovations, CLEO_SI 2012 - San Jose, CA, United States
Duration: May 6 2012May 11 2012

Publication series

NameCLEO: Science and Innovations, CLEO_SI 2012

Other

OtherCLEO: Science and Innovations, CLEO_SI 2012
CountryUnited States
CitySan Jose, CA
Period5/6/125/11/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Shin, J. C., Mohseni, P., Tomasulo, S., Montgomery, K., Lee, M., & Li, X. (2012). Heterogeneous Integration of III-V on Si: Overcoming the lattice-mismatch barrier via the 1D route. In CLEO: Science and Innovations, CLEO_SI 2012 (pp. CF3J.7). (CLEO: Science and Innovations, CLEO_SI 2012). Optical Society of America (OSA). https://doi.org/10.1364/cleo_si.2012.cf3j.7