Heterogeneous integration of III-V on Si: Overcoming the lattice-mismatch barrier via the 1D route

Jae Cheol Shin, Parsian Mohseni, Stephanie Tomasulo, Kyle Montgomery, Minjoo Lee, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate one-dimensional heteroepitaxy of InxGa 1-xAs nanowires in the entire composition range on silicon substrates without dislocations. Doping and interfaces are characterized. Applications including improving the silicon solar cell efficiency will be presented.

Original languageEnglish (US)
Title of host publication2012 Conference on Lasers and Electro-Optics, CLEO 2012
StatePublished - Dec 6 2012
Event2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States
Duration: May 6 2012May 11 2012

Publication series

Name2012 Conference on Lasers and Electro-Optics, CLEO 2012

Other

Other2012 Conference on Lasers and Electro-Optics, CLEO 2012
CountryUnited States
CitySan Jose, CA
Period5/6/125/11/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Shin, J. C., Mohseni, P., Tomasulo, S., Montgomery, K., Lee, M., & Li, X. (2012). Heterogeneous integration of III-V on Si: Overcoming the lattice-mismatch barrier via the 1D route. In 2012 Conference on Lasers and Electro-Optics, CLEO 2012 [6325563] (2012 Conference on Lasers and Electro-Optics, CLEO 2012).