Heterogeneous integration methods and devices

John Michael Dallesasse, P. L. Lam, B. Kesler, G. L. Su, G. Walter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The integration of III-V or III-N materials onto selected regions of a silicon or siliconon- insulator (SOI) with the goal of creating electronic-photonic circuits is examined. Epitaxial transfer and bonding methods are discussed, as well as issues of CMOS compatibility and the thermal environment of the III-V devices. Possible devices for future electronic-photonic integration are also discussed.

Original languageEnglish (US)
Title of host publicationIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2015
PublisherOptical Society of America (OSA)
Pages371p
ISBN (Print)9781557520005
StatePublished - 2015
EventIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2015 - Boston, United States
Duration: Jun 27 2015Jul 1 2015

Other

OtherIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2015
Country/TerritoryUnited States
CityBoston
Period6/27/157/1/15

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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