Heteroepitaxial Growth of GaN on Unconventional Templates and Layer-Transfer Techniques for Large-Area, Flexible/Stretchable Light-Emitting Diodes

Jun Hee Choi, Jinwoo Kim, Hyobin Yoo, Jinyun Liu, Sunil Kim, Chan Wook Baik, Chae Ryong Cho, Jin Gu Kang, Miyoung Kim, P. V. Braun, Sungwoo Hwang, Tae Sung Jung

Research output: Contribution to journalArticlepeer-review

Abstract

There have been significant recent developments in the growth of single-crystal gallium nitride (GaN) on unconventional templates for large-area blue or green light-emitting diodes (LEDs) which, together with layer transfer onto foreign substrates, can enable flexible and stretchable lighting applications. Here, the heteroepitaxial growth of GaN on amorphous and single-crystal substrates employing various interlayers and nucleation layers is reviewed, as well as the use of weak interfaces for layer-transfer onto foreign substrates. Recent progress in low-temperature GaN-based red-green-blue (RGB) LEDs on glass substrates, which has exhibited a calculated efficiency of 11% compared with that from commertial LEDs, is discussed. Layer-transfer techniques with various interlayers are also discussed. These heteroepitaxial GaN growth and layer-transfer technologies are expected to lead to new lighting and display devices with high efficiency and full-color tunability, which are suitable for large-area, stretchable display and lighting applications. Recent progress in high-quality GaN growth on unconventional templates and its transfer are reviewed. The main achievement includes GaN growth on 2D layered materials such as graphene and boron nitride, together with low-temperature growth techniques and unusual transfer techniques. It is anticipated that such successful GaN-based growth/transfer techniques will enable large-area, flexible/stretchable, green/blue light-emitting diodes.

Original languageEnglish (US)
Pages (from-to)505-521
Number of pages17
JournalAdvanced Optical Materials
Volume4
Issue number4
DOIs
StatePublished - Apr 1 2016

Keywords

  • Flexible devices
  • GaN
  • GaN transfer
  • Gallium nitride
  • Heteroepitaxial growth
  • Light-emitting diodes
  • Low-temperature growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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