Heterodyned electrostatic transduction oscillators evade low frequency noise aliasing

Gaurav Bahl, James Salvia, Hyung Kyu Lee, Renata Melamud, Bongsang Kim, Roger T. Howe, Thomas W. Kenny

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We recently demonstrated a polarization technique that eliminates the frequency drift due to dielectric charge in MEMS oscillators [1]. In this work we show that these oscillators are also first-order insensitive to low-frequency voltage noise, with potential for significant positive impact on predicted close-to-carrier phase noise performance. Close-to-carrier noise also determines the limits of some resonant sensor applications [2, 3].

Original languageEnglish (US)
Title of host publication2010 Solid-State Sensors, Actuators, and Microsystems Workshop
EditorsDavid J. Monk, Kimberly L. Turner
PublisherTransducer Research Foundation
Pages384-385
Number of pages2
ISBN (Electronic)0964002485, 9780964002487
DOIs
StatePublished - 2010
Externally publishedYes
Event2010 Solid-State Sensors, Actuators, and Microsystems Workshop - Hilton Head Island, United States
Duration: Jun 6 2010Jun 10 2010

Publication series

NameTechnical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop

Conference

Conference2010 Solid-State Sensors, Actuators, and Microsystems Workshop
CountryUnited States
CityHilton Head Island
Period6/6/106/10/10

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Hardware and Architecture

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  • Cite this

    Bahl, G., Salvia, J., Lee, H. K., Melamud, R., Kim, B., Howe, R. T., & Kenny, T. W. (2010). Heterodyned electrostatic transduction oscillators evade low frequency noise aliasing. In D. J. Monk, & K. L. Turner (Eds.), 2010 Solid-State Sensors, Actuators, and Microsystems Workshop (pp. 384-385). (Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop). Transducer Research Foundation. https://doi.org/10.31438/trf.hh2010.103