TY - JOUR
T1 - Heterodyne detection of radio-frequency electric fields using point defects in silicon carbide
AU - Wolfowicz, Gary
AU - Anderson, Christopher P.
AU - Whiteley, Samuel J.
AU - Awschalom, David D.
N1 - We thank F. Joseph Heremans and Samuel Bayliss for careful reading of the manuscript. G.W. was supported by the University of Chicago/Advanced Institute for Materials Research (AIMR) Joint Research Center, C.P.A. was supported by the Department of Defense through the NDSEG Program, S.J.W. was supported by the NSF GRFP, and D.D.A. was supported by the DOE, Office of Basic Energy Sciences. This work made use of the UChicago MRSEC (No. NSF DMR-1420709) and Pritzker Nanofabrication Facility, which receives support from the SHyNE, a node of the NSF’s National Nanotechnology Coordinated Infrastructure (No. NSF ECCS-1542205).
PY - 2019/7/22
Y1 - 2019/7/22
N2 - Sensing electric fields with high sensitivity, high spatial resolution, and at radio frequencies can be challenging to realize. Recently, point defects in silicon carbide have shown their ability to measure local electric fields by optical conversion of their charge state. Here, we report the combination of heterodyne detection with charge-based electric field sensing, solving many of the previous limitations of this technique. Owing to the nonlinear response of the charge conversion to electric fields, the application of a separate "pump" electric field results in a detection sensitivity as low as 1.1 (V/cm)/Hz, with a near-diffraction limited spatial resolution and tunable control of the sensor dynamic range. In addition, we show both incoherent and coherent heterodyne detection, allowing measurements of either unknown random fields or synchronized fields with higher sensitivities. Finally, we demonstrate in-plane vector measurements of the electric field by combining orthogonal pump electric fields. Overall, this work establishes charge-based measurements as highly relevant for solid-state defect sensing.
AB - Sensing electric fields with high sensitivity, high spatial resolution, and at radio frequencies can be challenging to realize. Recently, point defects in silicon carbide have shown their ability to measure local electric fields by optical conversion of their charge state. Here, we report the combination of heterodyne detection with charge-based electric field sensing, solving many of the previous limitations of this technique. Owing to the nonlinear response of the charge conversion to electric fields, the application of a separate "pump" electric field results in a detection sensitivity as low as 1.1 (V/cm)/Hz, with a near-diffraction limited spatial resolution and tunable control of the sensor dynamic range. In addition, we show both incoherent and coherent heterodyne detection, allowing measurements of either unknown random fields or synchronized fields with higher sensitivities. Finally, we demonstrate in-plane vector measurements of the electric field by combining orthogonal pump electric fields. Overall, this work establishes charge-based measurements as highly relevant for solid-state defect sensing.
UR - https://www.scopus.com/pages/publications/85069908140
UR - https://www.scopus.com/pages/publications/85069908140#tab=citedBy
U2 - 10.1063/1.5108913
DO - 10.1063/1.5108913
M3 - Article
AN - SCOPUS:85069908140
SN - 0003-6951
VL - 115
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 4
M1 - 043105
ER -