A mixture of 500 ppm CCl4 in H2 has been used to grow heavily doped p-type GaAs by low-pressure metalorganic chemical vapor deposition with TMGa and AsH3 as the group III and V sources, respectively. Carbon acceptor concentrations between 1×101 6 and 1×1019 cm-3 were obtained. In addition, abrupt carbon-doping profiles were achieved with no noticeable memory effects. Carrier concentration was studied as a function of CCl4 flow, V/III ratio, growth temperature, and growth rate using electrochemical capacitance-voltage profiling. Carbon incorporation was found to depend on CCl4 flow, V/III ratio, and growth temperature. Carbon incorporation had no dependence on the growth rate.

Original languageEnglish (US)
Pages (from-to)1905-1907
Number of pages3
JournalApplied Physics Letters
Issue number19
StatePublished - 1989

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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