Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride

B. T. Cunningham; M. A. Haase; M. J. McCollum; J. E. Baker; G. E. Stillman

doi:10.1063/1.101237

Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride

B. T. Cunningham, M. A. Haase, M. J. McCollum, J. E. Baker, G. E. Stillman

Research output: Contribution to journal › Article › peer-review

Abstract

A mixture of 500 ppm CCl₄ in H₂ has been used to grow heavily doped p-type GaAs by low-pressure metalorganic chemical vapor deposition with TMGa and AsH₃ as the group III and V sources, respectively. Carbon acceptor concentrations between 1×10¹ ⁶ and 1×10¹⁹ cm^-3 were obtained. In addition, abrupt carbon-doping profiles were achieved with no noticeable memory effects. Carrier concentration was studied as a function of CCl₄ flow, V/III ratio, growth temperature, and growth rate using electrochemical capacitance-voltage profiling. Carbon incorporation was found to depend on CCl₄ flow, V/III ratio, and growth temperature. Carbon incorporation had no dependence on the growth rate.

Original language	English (US)
Pages (from-to)	1905-1907
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	19
DOIs	https://doi.org/10.1063/1.101237
State	Published - 1989

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.101237

Library availability

Discover UIUC Full Text

Cite this

@article{81442ba4efda47aa8e28bede8a4e979f,

title = "Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride",

abstract = "A mixture of 500 ppm CCl4 in H2 has been used to grow heavily doped p-type GaAs by low-pressure metalorganic chemical vapor deposition with TMGa and AsH3 as the group III and V sources, respectively. Carbon acceptor concentrations between 1×101 6 and 1×1019 cm-3 were obtained. In addition, abrupt carbon-doping profiles were achieved with no noticeable memory effects. Carrier concentration was studied as a function of CCl4 flow, V/III ratio, growth temperature, and growth rate using electrochemical capacitance-voltage profiling. Carbon incorporation was found to depend on CCl4 flow, V/III ratio, and growth temperature. Carbon incorporation had no dependence on the growth rate.",

author = "Cunningham, {B. T.} and Haase, {M. A.} and McCollum, {M. J.} and Baker, {J. E.} and Stillman, {G. E.}",

year = "1989",

doi = "10.1063/1.101237",

language = "English (US)",

volume = "54",

pages = "1905--1907",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride

AU - Cunningham, B. T.

AU - Haase, M. A.

AU - McCollum, M. J.

AU - Baker, J. E.

AU - Stillman, G. E.

PY - 1989

Y1 - 1989

N2 - A mixture of 500 ppm CCl4 in H2 has been used to grow heavily doped p-type GaAs by low-pressure metalorganic chemical vapor deposition with TMGa and AsH3 as the group III and V sources, respectively. Carbon acceptor concentrations between 1×101 6 and 1×1019 cm-3 were obtained. In addition, abrupt carbon-doping profiles were achieved with no noticeable memory effects. Carrier concentration was studied as a function of CCl4 flow, V/III ratio, growth temperature, and growth rate using electrochemical capacitance-voltage profiling. Carbon incorporation was found to depend on CCl4 flow, V/III ratio, and growth temperature. Carbon incorporation had no dependence on the growth rate.

AB - A mixture of 500 ppm CCl4 in H2 has been used to grow heavily doped p-type GaAs by low-pressure metalorganic chemical vapor deposition with TMGa and AsH3 as the group III and V sources, respectively. Carbon acceptor concentrations between 1×101 6 and 1×1019 cm-3 were obtained. In addition, abrupt carbon-doping profiles were achieved with no noticeable memory effects. Carrier concentration was studied as a function of CCl4 flow, V/III ratio, growth temperature, and growth rate using electrochemical capacitance-voltage profiling. Carbon incorporation was found to depend on CCl4 flow, V/III ratio, and growth temperature. Carbon incorporation had no dependence on the growth rate.

UR - http://www.scopus.com/inward/record.url?scp=0013275852&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0013275852&partnerID=8YFLogxK

U2 - 10.1063/1.101237

DO - 10.1063/1.101237

M3 - Article

AN - SCOPUS:0013275852

SN - 0003-6951

VL - 54

SP - 1905

EP - 1907

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this