Heavily nitrogen-doped titanium oxide thin films by reactive sputtering and excimer laser annealing

Qi Li, Jian Ku Shang

Research output: Contribution to journalArticle

Abstract

A novel nonequilibrium approach combining low-temperature reactive sputtering and excimer laser annealing was developed to resolve the opposing requirements on crystallization and minimization of dopant loss for creating heavily nitrogen-doped TiO2 (TiON) thin film. By retaining nitrogen dopant concentration in the sputtered film, the laser annealing allowed exploration of new material chemistry not generally available to the conventional approaches. Compared with the traditional thermal annealing, the excimer laser annealing created TiON thin film samples with a higher nitrogen dopant concentration, better crystallization, higher visible light absorbance, and faster degradation effect on organic pollutants. The crystallization process from excimer laser annealing was carried out at room temperature with minimal damage to the substrate, thus applicable to plastic/ organic substrates. This approach could be easily applied to other dopant/thin film/substrate systems, opening up an unexplored avenue for creating thin films with novel properties for a broad range of potential technological applications.

Original languageEnglish (US)
Pages (from-to)3039-3042
Number of pages4
JournalJournal of the American Ceramic Society
Volume93
Issue number10
DOIs
StatePublished - Oct 1 2010

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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