Heat transport in micron thick a-Si: H films

David G. Cahill; M. Katiyar; J. R. Abelson

doi:10.1080/01418639508238557

Heat transport in micron thick a-Si: H films

Research output: Contribution to journal › Article › peer-review

Abstract

The thermal conductivity of a-Si: H thin films is determined in the temperature range 80-400 K in order to test recent theoretical calculations of heat transport in disordered harmonic solids. The hydrogen content of the a-Si:H films was varied from 1 to 20% using reactive magnetron sputtering and the data show little variation with hydrogen content. The low void fraction of these sputtered films and the phonon scattering provided by the film/substrate interface facilitate a quantitative comparison between experiment and theory. A simple extension of the theoretical calculation to include heat transport by long-wavelength phonons results in impressive agreement between experiment and theory.

Original language	English (US)
Pages (from-to)	677-682
Number of pages	6
Journal	Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume	71
Issue number	4
DOIs	https://doi.org/10.1080/01418639508238557
State	Published - Apr 1995

ASJC Scopus subject areas

General Chemical Engineering
General Physics and Astronomy

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10.1080/01418639508238557

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title = "Heat transport in micron thick a-Si: H films",

abstract = "The thermal conductivity of a-Si: H thin films is determined in the temperature range 80-400 K in order to test recent theoretical calculations of heat transport in disordered harmonic solids. The hydrogen content of the a-Si:H films was varied from 1 to 20\% using reactive magnetron sputtering and the data show little variation with hydrogen content. The low void fraction of these sputtered films and the phonon scattering provided by the film/substrate interface facilitate a quantitative comparison between experiment and theory. A simple extension of the theoretical calculation to include heat transport by long-wavelength phonons results in impressive agreement between experiment and theory.",

author = "Cahill, \{David G.\} and M. Katiyar and Abelson, \{J. R.\}",

note = "ACKNOWLEDGMENTS This work was supported by the US Department of Energy grant no. DEFG02-91-ER45439 through the University of Illinois Material Research Laboratory and the exploratory research program of the Electric Power Research Institute (EPRI RP 8001-7). Photolithography was carried out at the Centre for Microanalysis of Materials at the University of Illinois. We also thank Joe Feldman for transmitting the results of his study and several helpful discussions.",

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doi = "10.1080/01418639508238557",

language = "English (US)",

volume = "71",

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AU - Cahill, David G.

AU - Katiyar, M.

AU - Abelson, J. R.

N1 - ACKNOWLEDGMENTS This work was supported by the US Department of Energy grant no. DEFG02-91-ER45439 through the University of Illinois Material Research Laboratory and the exploratory research program of the Electric Power Research Institute (EPRI RP 8001-7). Photolithography was carried out at the Centre for Microanalysis of Materials at the University of Illinois. We also thank Joe Feldman for transmitting the results of his study and several helpful discussions.

PY - 1995/4

Y1 - 1995/4

N2 - The thermal conductivity of a-Si: H thin films is determined in the temperature range 80-400 K in order to test recent theoretical calculations of heat transport in disordered harmonic solids. The hydrogen content of the a-Si:H films was varied from 1 to 20% using reactive magnetron sputtering and the data show little variation with hydrogen content. The low void fraction of these sputtered films and the phonon scattering provided by the film/substrate interface facilitate a quantitative comparison between experiment and theory. A simple extension of the theoretical calculation to include heat transport by long-wavelength phonons results in impressive agreement between experiment and theory.

AB - The thermal conductivity of a-Si: H thin films is determined in the temperature range 80-400 K in order to test recent theoretical calculations of heat transport in disordered harmonic solids. The hydrogen content of the a-Si:H films was varied from 1 to 20% using reactive magnetron sputtering and the data show little variation with hydrogen content. The low void fraction of these sputtered films and the phonon scattering provided by the film/substrate interface facilitate a quantitative comparison between experiment and theory. A simple extension of the theoretical calculation to include heat transport by long-wavelength phonons results in impressive agreement between experiment and theory.

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JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

IS - 4

ER -

Heat transport in micron thick a-Si: H films

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