Heat transport in micron thick a-Si: H films

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The thermal conductivity of a-Si: H thin films is determined in the temperature range 80-400 K in order to test recent theoretical calculations of heat transport in disordered harmonic solids. The hydrogen content of the a-Si:H films was varied from 1 to 20% using reactive magnetron sputtering and the data show little variation with hydrogen content. The low void fraction of these sputtered films and the phonon scattering provided by the film/substrate interface facilitate a quantitative comparison between experiment and theory. A simple extension of the theoretical calculation to include heat transport by long-wavelength phonons results in impressive agreement between experiment and theory.

Original languageEnglish (US)
Pages (from-to)677-682
Number of pages6
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Issue number4
StatePublished - Apr 1995

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Physics and Astronomy(all)


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