Heat flow analysis for EOS/ESD protection device design in SOI technology

Prasun Raha, Sridhar Ramaswamy, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

Power-to-failure versus time-to-failure profiles for SOI protection devices are generated through a consideration of Joule heating. Experimental results are presented to justify assumptions made in the investigation of heat flow in SOI devices. A lossy transmission line equivalent model has been used to model the heat diffusion problem. A design space for multifinger NMOS protection devices has been developed on the basis of self-heating constraints. The method of images has been used to transform the multifinger device to an equivalent single-finger device to simplify the heat flow analysis.

Original languageEnglish (US)
Pages (from-to)464-471
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume44
Issue number3
DOIs
StatePublished - Dec 1 1997

Fingerprint

Heat transfer
Joule heating
Electric lines
Heating
Hot Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Heat flow analysis for EOS/ESD protection device design in SOI technology. / Raha, Prasun; Ramaswamy, Sridhar; Rosenbaum, Elyse.

In: IEEE Transactions on Electron Devices, Vol. 44, No. 3, 01.12.1997, p. 464-471.

Research output: Contribution to journalArticle

@article{cb8682fadbb94e91a3092c4e5aa9eca1,
title = "Heat flow analysis for EOS/ESD protection device design in SOI technology",
abstract = "Power-to-failure versus time-to-failure profiles for SOI protection devices are generated through a consideration of Joule heating. Experimental results are presented to justify assumptions made in the investigation of heat flow in SOI devices. A lossy transmission line equivalent model has been used to model the heat diffusion problem. A design space for multifinger NMOS protection devices has been developed on the basis of self-heating constraints. The method of images has been used to transform the multifinger device to an equivalent single-finger device to simplify the heat flow analysis.",
author = "Prasun Raha and Sridhar Ramaswamy and Elyse Rosenbaum",
year = "1997",
month = "12",
day = "1",
doi = "10.1109/16.556157",
language = "English (US)",
volume = "44",
pages = "464--471",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

TY - JOUR

T1 - Heat flow analysis for EOS/ESD protection device design in SOI technology

AU - Raha, Prasun

AU - Ramaswamy, Sridhar

AU - Rosenbaum, Elyse

PY - 1997/12/1

Y1 - 1997/12/1

N2 - Power-to-failure versus time-to-failure profiles for SOI protection devices are generated through a consideration of Joule heating. Experimental results are presented to justify assumptions made in the investigation of heat flow in SOI devices. A lossy transmission line equivalent model has been used to model the heat diffusion problem. A design space for multifinger NMOS protection devices has been developed on the basis of self-heating constraints. The method of images has been used to transform the multifinger device to an equivalent single-finger device to simplify the heat flow analysis.

AB - Power-to-failure versus time-to-failure profiles for SOI protection devices are generated through a consideration of Joule heating. Experimental results are presented to justify assumptions made in the investigation of heat flow in SOI devices. A lossy transmission line equivalent model has been used to model the heat diffusion problem. A design space for multifinger NMOS protection devices has been developed on the basis of self-heating constraints. The method of images has been used to transform the multifinger device to an equivalent single-finger device to simplify the heat flow analysis.

UR - http://www.scopus.com/inward/record.url?scp=0031102960&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031102960&partnerID=8YFLogxK

U2 - 10.1109/16.556157

DO - 10.1109/16.556157

M3 - Article

AN - SCOPUS:0031102960

VL - 44

SP - 464

EP - 471

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 3

ER -