Heat flow analysis for EOS/ESD protection device design in SOI technology

Prasun Raha; Sridhar Ramaswamy; Elyse Rosenbaum

doi:10.1109/16.556157

Heat flow analysis for EOS/ESD protection device design in SOI technology

Prasun Raha, Sridhar Ramaswamy, Elyse Rosenbaum

Research output: Contribution to journal › Article › peer-review

Abstract

Power-to-failure versus time-to-failure profiles for SOI protection devices are generated through a consideration of Joule heating. Experimental results are presented to justify assumptions made in the investigation of heat flow in SOI devices. A lossy transmission line equivalent model has been used to model the heat diffusion problem. A design space for multifinger NMOS protection devices has been developed on the basis of self-heating constraints. The method of images has been used to transform the multifinger device to an equivalent single-finger device to simplify the heat flow analysis.

Original language	English (US)
Pages (from-to)	464-471
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	44
Issue number	3
DOIs	https://doi.org/10.1109/16.556157
State	Published - 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.556157

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title = "Heat flow analysis for EOS/ESD protection device design in SOI technology",

abstract = "Power-to-failure versus time-to-failure profiles for SOI protection devices are generated through a consideration of Joule heating. Experimental results are presented to justify assumptions made in the investigation of heat flow in SOI devices. A lossy transmission line equivalent model has been used to model the heat diffusion problem. A design space for multifinger NMOS protection devices has been developed on the basis of self-heating constraints. The method of images has been used to transform the multifinger device to an equivalent single-finger device to simplify the heat flow analysis.",

author = "Prasun Raha and Sridhar Ramaswamy and Elyse Rosenbaum",

note = "Funding Information: Manuscript received March 15, 1996; revised September 17, 1996. This work was supported by a grant from the EOS/ESD Association, by the Joint Services Electronics Program under Contract N00014-96-1-0129, and by the National Science Foundation. The review of this paper was arranged by Editor G. W. Neudeck. Funding Information: Dr. Rosenbaum has been the recipient of a Best Student Paper Award from IEDM, a Technical Excellence Award from the SRC, and an NSF Career Award.",

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PY - 1997

Y1 - 1997

N2 - Power-to-failure versus time-to-failure profiles for SOI protection devices are generated through a consideration of Joule heating. Experimental results are presented to justify assumptions made in the investigation of heat flow in SOI devices. A lossy transmission line equivalent model has been used to model the heat diffusion problem. A design space for multifinger NMOS protection devices has been developed on the basis of self-heating constraints. The method of images has been used to transform the multifinger device to an equivalent single-finger device to simplify the heat flow analysis.

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Heat flow analysis for EOS/ESD protection device design in SOI technology

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