Heat flow analysis for EOS/ESD protection device design in SOI technology

Prasun Raha, Sridhar Ramaswamy, Elyse Rosenbaum

Research output: Contribution to journalArticle


Power-to-failure versus time-to-failure profiles for SOI protection devices are generated through a consideration of Joule heating. Experimental results are presented to justify assumptions made in the investigation of heat flow in SOI devices. A lossy transmission line equivalent model has been used to model the heat diffusion problem. A design space for multifinger NMOS protection devices has been developed on the basis of self-heating constraints. The method of images has been used to transform the multifinger device to an equivalent single-finger device to simplify the heat flow analysis.

Original languageEnglish (US)
Pages (from-to)464-471
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number3
StatePublished - Dec 1 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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