Heat conduction across monolayer and few-layer graphenes

Yee Kan Koh, Myung Ho Bae, David G. Cahill, Eric Pop

Research output: Contribution to journalArticle

Abstract

We report the thermal conductance G of Au/Ti/graphene/SiO2 interfaces (graphene layers 1 ≤ n ≤ 10) typical of graphene transistor contacts. We find G ≈ 25 MW m-2 K-1 at room temperature, four times smaller than the thermal conductance of a Au/Ti/ SiO2 interface, even when n = 1. We attribute this reduction to the thermal resistance of Au/Ti/graphene and graphene/SiO2 interfaces acting in series. The temperature dependence of G from 50 ≤ T ≤ 500 K also indicates that heat is predominantly carried by phonons through these interfaces. Our findings suggest that metal contacts can limit not only electrical transport but also thermal dissipation from submicrometer graphene devices.

Original languageEnglish (US)
Pages (from-to)4363-4368
Number of pages6
JournalNano letters
Volume10
Issue number11
DOIs
StatePublished - Nov 10 2010

Keywords

  • acoustic phonons
  • few-layer graphene
  • heat dissipation
  • Interfacial thermal conductance
  • metal contacts
  • thermal management of graphene devices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

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