Hafnium diboride thin films by chemical vapor deposition from a single source precursor

Sreenivas Jayaraman, Yu Yang, Do Young Kim, Gregory S. Girolami, John R. Abelson

Research output: Contribution to journalArticlepeer-review


High quality, stoichiometric thin films of hafnium diboride are deposited by chemical vapor deposition from the precursor Hf [B H4] 4 at deposition temperatures as low as 200°C. An activation energy of 0.43 eV (41 kJmol) is obtained for the overall process as monitored by temperature programmed reaction studies. Films deposited at low temperatures (<500°C) are structurally amorphous to x-ray diffraction; a 12 nm thick film is sufficient to prevent copper diffusion into silicon during a 600°C anneal for 30 min. Films deposited above 500°C are crystalline, but have a columnar microstructure with low density. All the films are metallic, but the low temperature amorphous films have the lowest resistivity ∼440 μΩ cm. The process is also highly conformal, e.g., a 65 nm wide trench with a 19:1 depth-width aspect ratio was coated uniformly.

Original languageEnglish (US)
Pages (from-to)1619-1625
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number6
StatePublished - Nov 2005

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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