Growth of untwinned Bi2Sr2Ca2Cu 3Ox thin films by atomically layered epitaxy

J. N. Eckstein; I. Bozovic; D. G. Schlom; J. S. Harris

doi:10.1063/1.104278

Growth of untwinned Bi₂Sr₂Ca₂Cu ₃O_x thin films by atomically layered epitaxy

J. N. Eckstein, I. Bozovic, D. G. Schlom, J. S. Harris

Research output: Contribution to journal › Article › peer-review

Abstract

We report the growth of untwinned epitaxial thin films of Bi-Sr-Ca-Cu-O by atomically layered heteroepitaxy on SrTiO₃ substrates. These films are c-axis oriented as-layered and do not exhibit 90°in-plane defects, i.e., a-b "twinning". By misorienting the surface normal from {100} by approximately 4°towards 〈111〉, the cubic symmetry of the {100} surface is adequately broken to completely align the b axis of the superconducting film with respect to the substrate. Reflection high-energy electron diffraction patterns observed during growth and post-growth x-ray diffraction analysis indicate that the incommensurate structural modulation occurs along the same direction as the step edges.

Original language	English (US)
Pages (from-to)	1049-1051
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	10
DOIs	https://doi.org/10.1063/1.104278
State	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.104278

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Cite this

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title = "Growth of untwinned Bi2Sr2Ca2Cu 3Ox thin films by atomically layered epitaxy",

abstract = "We report the growth of untwinned epitaxial thin films of Bi-Sr-Ca-Cu-O by atomically layered heteroepitaxy on SrTiO3 substrates. These films are c-axis oriented as-layered and do not exhibit 90°in-plane defects, i.e., a-b {"}twinning{"}. By misorienting the surface normal from {100} by approximately 4°towards 〈111〉, the cubic symmetry of the {100} surface is adequately broken to completely align the b axis of the superconducting film with respect to the substrate. Reflection high-energy electron diffraction patterns observed during growth and post-growth x-ray diffraction analysis indicate that the incommensurate structural modulation occurs along the same direction as the step edges.",

author = "Eckstein, {J. N.} and I. Bozovic and Schlom, {D. G.} and Harris, {J. S.}",

year = "1990",

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AU - Bozovic, I.

AU - Schlom, D. G.

AU - Harris, J. S.

PY - 1990

Y1 - 1990

N2 - We report the growth of untwinned epitaxial thin films of Bi-Sr-Ca-Cu-O by atomically layered heteroepitaxy on SrTiO3 substrates. These films are c-axis oriented as-layered and do not exhibit 90°in-plane defects, i.e., a-b "twinning". By misorienting the surface normal from {100} by approximately 4°towards 〈111〉, the cubic symmetry of the {100} surface is adequately broken to completely align the b axis of the superconducting film with respect to the substrate. Reflection high-energy electron diffraction patterns observed during growth and post-growth x-ray diffraction analysis indicate that the incommensurate structural modulation occurs along the same direction as the step edges.

AB - We report the growth of untwinned epitaxial thin films of Bi-Sr-Ca-Cu-O by atomically layered heteroepitaxy on SrTiO3 substrates. These films are c-axis oriented as-layered and do not exhibit 90°in-plane defects, i.e., a-b "twinning". By misorienting the surface normal from {100} by approximately 4°towards 〈111〉, the cubic symmetry of the {100} surface is adequately broken to completely align the b axis of the superconducting film with respect to the substrate. Reflection high-energy electron diffraction patterns observed during growth and post-growth x-ray diffraction analysis indicate that the incommensurate structural modulation occurs along the same direction as the step edges.

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