Growth of polycrystalline silicon at 470°C by magnetron sputtering onto a sputtered μc-hydrogenated silicon seed layer

Keyphrases

• Magnetron Sputtering 100%
• Polysilicon 100%
• Seed Layer 100%
• Hydrogenated Silicon 100%
• Grain Width 66%
• Glass Substrate 33%
• In Situ 33%
• Nucleation Mechanism 33%
• Amorphous Silicon 33%
• Film Thickness 33%
• High-throughput Methods 33%
• Real Time Spectroscopic Ellipsometry 33%
• DC Magnetron Sputtering 33%
• Hydrogenated 33%
• Crystallite Size 33%
• Step Processes 33%
• H2 Atmosphere 33%
• C-Si 33%
• Ar Plasma 33%
• Direct Deposition 33%
• Amorphous Interfacial Layer 33%

Material Science

• Silicon 100%
• Magnetron Sputtering 100%
• Nucleation 50%
• Film Thickness 25%
• Amorphous Silicon 25%
• Crystallite Size 25%