TY - GEN
T1 - Growth of metamorphic GaAsP solar cells on GaP
AU - Tomasulo, Stephanie
AU - Yaung, Kevin Nay
AU - Simon, John
AU - Lee, Minjoo Larry
PY - 2012
Y1 - 2012
N2 - In this work, we demonstrate metamorphic GaAsxP 1-x/GaP solar cells grown by molecular beam epitaxy for potential dual-junction integration with Si. We investigate the appropriate substrate orientation and growth conditions necessary to obtain smooth surface morphology with high open-circuit voltage (Voc). Growing nearly identical GaAsxP1-x/GaP (x=0.65±0.01) cells at three different substrate temperatures allowed us to investigate the dislocation dynamics in the graded buffer, revealing that we are not in the ideal glide-limited regime. We expect this is due to thread interactions with morphological defects. To satisfy the design requirements of the ideal dual-junction device, we grew 1.71 eV GaAs0.73P0.27/GaP cells, attaining a high Voc of 1.15 V. With increased short-circuit current through the addition of a window layer and antireflection coating, the GaAsxP1-x cells presented here cascaded with Si could reach efficiencies as high as 30%.
AB - In this work, we demonstrate metamorphic GaAsxP 1-x/GaP solar cells grown by molecular beam epitaxy for potential dual-junction integration with Si. We investigate the appropriate substrate orientation and growth conditions necessary to obtain smooth surface morphology with high open-circuit voltage (Voc). Growing nearly identical GaAsxP1-x/GaP (x=0.65±0.01) cells at three different substrate temperatures allowed us to investigate the dislocation dynamics in the graded buffer, revealing that we are not in the ideal glide-limited regime. We expect this is due to thread interactions with morphological defects. To satisfy the design requirements of the ideal dual-junction device, we grew 1.71 eV GaAs0.73P0.27/GaP cells, attaining a high Voc of 1.15 V. With increased short-circuit current through the addition of a window layer and antireflection coating, the GaAsxP1-x cells presented here cascaded with Si could reach efficiencies as high as 30%.
KW - GaAsP
KW - dual-junction photovoltaic cells
KW - molecular beam epitaxy
UR - https://www.scopus.com/pages/publications/84869482304
UR - https://www.scopus.com/pages/publications/84869482304#tab=citedBy
U2 - 10.1109/PVSC.2012.6317921
DO - 10.1109/PVSC.2012.6317921
M3 - Conference contribution
AN - SCOPUS:84869482304
SN - 9781467300643
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1692
EP - 1697
BT - Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
T2 - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Y2 - 3 June 2012 through 8 June 2012
ER -