Growth of metamorphic GaAsP solar cells on GaP

Stephanie Tomasulo, Kevin Nay Yaung, John Simon, Minjoo Larry Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we demonstrate metamorphic GaAsxP 1-x/GaP solar cells grown by molecular beam epitaxy for potential dual-junction integration with Si. We investigate the appropriate substrate orientation and growth conditions necessary to obtain smooth surface morphology with high open-circuit voltage (Voc). Growing nearly identical GaAsxP1-x/GaP (x=0.65±0.01) cells at three different substrate temperatures allowed us to investigate the dislocation dynamics in the graded buffer, revealing that we are not in the ideal glide-limited regime. We expect this is due to thread interactions with morphological defects. To satisfy the design requirements of the ideal dual-junction device, we grew 1.71 eV GaAs0.73P0.27/GaP cells, attaining a high Voc of 1.15 V. With increased short-circuit current through the addition of a window layer and antireflection coating, the GaAsxP1-x cells presented here cascaded with Si could reach efficiencies as high as 30%.

Original languageEnglish (US)
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages1692-1697
Number of pages6
DOIs
StatePublished - 2012
Externally publishedYes
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

Keywords

  • GaAsP
  • dual-junction photovoltaic cells
  • molecular beam epitaxy

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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